Z6 The explanation that similar, hexagonal-shaped terraces, found on the etched (0001) cadmium face of bulk CdS are due to a deviation of the surface orientation from the basal plane (e.g., Ref. 19) could not be substantiated for the present samples.The Hall effect and resistivity have been measured as a function of temperature for lightly Zn-doped GaAs of better quality than previously available. Analysis of the Hall coefficient data yields activation energies which change with doping level. These results, along with earlier results on more heavily doped samples, can be represented by EA=0.0308-2.34XI0-8 (NlA)I/3 eV. The Hall mobility as a function of temperature leads to PL = 400 (300IT) 2.41 for the lattice mobility of p-type GaAs.
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