Infrared Transmission and Fluorescence of Doped Gallium Arsenide

Hill, D. E.

doi:10.1103/physrev.133.a866

Cited by 214 publications

(30 citation statements)

References 18 publications

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“…In [62][63][64][65] or Ge, Sn on the anion site, 66,67 those with cation dopants in this case show higher mobilities. Even though GaAs is generally considered a covalent compound, its valence band has more contribution 68 from As states, this aligns again with Ioffe's picture illustrated in Fig.…”

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confidence: 91%

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

et al. 2015

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In the rigid band approximation dopants in semiconductors only change the Fermi level and carrier concentration such that different dopants are thought equivalent when fully ionized. In this work we examine the small but significant difference in mobility due to the type of dopant in heavily doped PbSe by studying n-type samples doped with Br, In and Bi. We propose that cation and anion dopants lead to a difference in mobility at high concentrations. This can be understood considering the predominance of cation states to the conduction band and anion states to the valence band. For higher mobility and better performance for most applications of heavily doped semiconductors, dopants should be on the site that is of less influence on the chargeconducting band. This concept can be viewed as an analog of modulation doping on the atomic level. Its physical origin is the random potential due to disorder that perturbs carriers, which is also the origin of Anderson localization at low temperature, a well-studied topic in theoretical physics. In thermoelectric PbSe, the selection of dopant can lead to 10% difference in mobility and in zT.

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confidence: 91%

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

et al. 2015

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“…With increasing charge carrier concentration band filling sets in and interferes with the former, finally resulting in an increase of the optical band gap. For an overview see Hill [16] and Casey [17]. Because of this the wavelength region close to the band gap cannot be used for the optical determination of the charge carrier concentration.…”

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confidence: 99%

Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping

Künecke

Wellmann

2006

Eur. Phys. J. Appl. Phys.

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Abstract.In an earlier paper [P.J. Wellmann, A. Albrecht, U. Künecke, B. Birkmann, G. Mueller, M. Jurisch, Eur. Phys. J. Appl. Phys. 27, 357 (2004)] an optical method based on whole wafer absorption measurements was presented to determine the charge carrier concentration and its lateral distribution in n-type (Si/Te) doped GaAs. The submitted results for Si-doped GaAs gave rise to questions concerning the interpretation of absorption mappings in wafers with high dislocation densities. GaAs substrates for optoelectronic devices are strongly affected by dislocations.Therefore further studies were conducted: absorption and Hall measurements were performed on GaAs:Si wafers with high and low dislocation densities. Absorption in Si-doped GaAs is far more complex than in Te-doped GaAs. It shows a co-dependency on charge carrier concentration and dislocation content which causes complications in the quantitative optical determination of the charge carrier concentration. Qualitatively, absorption mappings depict dislocations and variations of charge carrier concentration very well. PACS

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“…The slope of the fundamental absorption edge depends strongly upon donor concentration in n-doped samples; to the contrary, it is nearly independent of acceptor concentration in p-doped samples [14]. The strong dependence of the slope on both donor and acceptor concentration found in closely compensated samples [21] will not be discussed here.…”

Section: Absorptionmentioning

confidence: 90%

The Shape Parameter of Donor Band Tails in Gallium Arsenide

Wittmann

1969

Physica Status Solidi (b)

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The shape parameter of the donor band tail in heavily n-doped GaAs and in GaAs p-n junctions has been obtained from absorption and electroluminescence measurements. The experimentally determined dependence of the shape parameter on donor concentration follows a power law as predicted by Kane.Der Formparameter des Donatorbandauslllufers in hoch n-dotiertem GaAs und in GaAs-p-n-Ubergllngen wurde durch Absorptions-und Elektrolumineszenzmessungen ermittelt. Die experimentell bestimmte Abhllngigkeit des Formparameters von der Donatorkonzentration folgt einem von Kane vorhergesagten Potenzgesetz.

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Infrared Transmission and Fluorescence of Doped Gallium Arsenide

Cited by 214 publications

References 18 publications

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe

Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping

The Shape Parameter of Donor Band Tails in Gallium Arsenide

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