Activation Energy of Holes in Zn-Doped GaAs

Hill, D. E.

doi:10.1063/1.1659109

Cited by 62 publications

(9 citation statements)

References 14 publications

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“…We can see that our proposed model provide a good agreement in a wide range of temperatures for different compensation ratios and doping concentrations. In Figure 3 a similar comparison between theoretically calculated (Hill, 1969) and GA predicted data have been made for the low‐field electron mobility vs the electron concentration at T =77 K. The proposed approximations provide rather good agreement with available data for the GaAs electron mobility.…”

Section: Simulation Results and Discussionsupporting

confidence: 68%

“…The best founded values by GA have been listed below: Equation 11 Predictive property of the GA‐optimized mobility model has been validated by comparison with the experimental and modeling data set. Figure 1 shows the low‐field electron motility (model from Lancefield et al (1987)) as a function of the electron concentration along with the estimated electron mobility using GA at different compensation ratios for T =300 K. Figure 2 shows a good agreement between the experimental electron mobility (Hill, 1969) as function of temperature and predicted electron mobility by the GA model. We can see that our proposed model provide a good agreement in a wide range of temperatures for different compensation ratios and doping concentrations.…”

Section: Simulation Results and Discussionmentioning

confidence: 75%

“…Low‐field electron mobility as a function of temperature in GaAs at different values of doping concentration…”

Section: Figurementioning

confidence: 99%

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Investigation of electron mobility in GaAs‐based devices using genetic algorithm

Taheri

Davoodi

Setayeshi

2012

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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PurposeThe purpose of this work is to study the capability of heuristic algorithms like genetic algorithm to estimate the electron transport parameters of the Gallium Arsenide (GaAs). Also, the paper provides a simple but complete electron mobility model for the GaAs based on the genetic algorithm that can be suitable for use in simulation, optimization and design of GaAs‐based electronic and optoelectronic devices.Design/methodology/approachThe genetic algorithm as a powerful heuristic optimization technique is used to approximate the electron transport parameters during the model development.FindingsThe capability of the model to approximate the electron transport properties of Gallium Arsenide is tested using experimental and Monte Carlo data. Results show that the genetic algorithm based model can provide a reliable estimate of the electron mobility in Gallium Arsenide for a wide range of temperatures, concentrations and electric fields. Based on the obtained results, this paper shows that the genetic algorithm can be a useful tool for the estimation of the transport parameters of semiconductors.Originality/valueFor the first time, the genetic algorithm is used to calculate the electron transport parameters in Gallium Arsenide. A complete electron mobility model for a wide range of temperatures, doping concentrations, compensation ratios and electric fields is developed.

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Section: Simulation Results and Discussionsupporting

confidence: 68%

Section: Simulation Results and Discussionmentioning

confidence: 75%

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Investigation of electron mobility in GaAs‐based devices using genetic algorithm

Taheri

Davoodi

Setayeshi

2012

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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“…In bulk GaAs the holes mobility above 200 K is dominated by lattice scattering: lat ( ) = 0 (297 K/ ) , where 0 and = 2.3 are constants [26,27], as well as by ionized impurity scattering ii [28]. The Matthiessen rule [ ( )] −1 = [ lat ( )] −1 + [ ii ] −1 can be applied in order to found the total holes mobility ( ) [26][27][28]. Therefore the electrical resistivity can be approximately expressed by [29]…”

Section: Resultsmentioning

confidence: 99%

Electrical Properties of Polytypic Mg Doped GaAs Nanowires

Cifuentes

Viana

Limborço

et al. 2016

Journal of Nanomaterials

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The electrical transport properties of individual Mg doped GaAs nanowires are investigated. It is shown that Mg can be successfully used as a nontoxic p-type dopant in GaAs nanowires. The doping levels, expanding over two orders of magnitude, and free holes mobility in the NW were obtained by the analysis of field effect transistors transfer curves. The temperature dependence of the electrical resistivity above room temperature shows that the polytypic structure of the NWs strongly modifies the NWs charge transport parameters, like the resistivity activation energy and holes mobility. At lower temperatures the NWs exhibit variable range hopping conduction. Both Mott and Efros-Shklovskii variable range hopping mechanisms were clearly identified in the nanowires.

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“…27 This behavior is the same as the one in the insulating region of the non-magnetic accepter-doped p-type GaAs. 29 The Fermi level behavior in the paramagnetic region is caused by the screening effect due to the heavy Mn doping, which makes the IB position close to the VB. On the other hand, E F increases as x increases in the ferromagnetic GaMnAs with x > 1%, which means that the Fermi level moves away from the VB.…”

mentioning

confidence: 99%

Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism

Muneta

Terada

Ohya

et al. 2013

Applied Physics Letters

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We present the systematic study of the resonant tunneling spectroscopy on a series of ferromagnetic-semiconductor Ga 1−x Mn x As with the Mn content x from ∼0.01 to 3.2%. The Fermi level of Ga 1−x Mn x As exists in the band gap in the whole x region. The Fermi level is closest to the valence band (VB) at x=1.0% corresponding to the onset of ferromagnetism near the metal-insulator transition (MIT), but it moves away from the VB as x increases or decreases from 1.0%. This anomalous behavior of the Fermi level indicates that the ferromagnetism and MIT emerge in the Mn-derived impurity band.The origin of the ferromagnetism and the metal-insulator transition (MIT) has been a long-debated issue in the prototype ferromagnetic semiconductor GaMnAs. 1-4 Previously, the valence band (VB) conduction picture has been widely accepted in this material, 5 where the MIT of GaMnAs was understood by the Fermi level crossing over the VB 2,6 similarly to p-type GaAs doped with non-magnetic acceptors such as Be or Zn. The ferromagnetism in GaMnAs has been thought to be induced by the VB holes interacting with the localized d electrons of the Mn atoms. 5,7 However, recently, many experiments have shown the strong evidence that the Fermi level exists in the impurity band (IB) in the band gap, 4,8-21 which requires reconsideration on the above scenario. Therefore, to clarify the origin of the ferromagnetism and MIT in GaMnAs, it is essential to precisely investigate the Fermi level position and the VB structure of GaMnAs in the low Mn content region including the onset of ferromagnetism and MIT.Resonant tunneling spectroscopy is a powerful method to investigate the VB structure and the Fermi level position in GaMnAs with a precision of several meV. The advantage of this method is that we can detect energy bands only with the same wave-function symmetry as that of the p-wave functions of the VB holes. Also, it is sensitive to the effective mass of the energy bands. Furthermore, by carefully analyzing the quantum-well (QW) thickness dependence of the resonant levels, we can avoid the unwanted effects induced at the surface, which prevent the precise determination of the VB or the Fermi level position. 3,22 Recently, from the resonant tunneling experiments in the double-barrier (DB) QW heterostructures 14,15 and the single-barrier structures with an ultra-thin surface GaMnAs layer, 16 it was shown that the Fermi level exists in the band gap in Ga 1−x Mn x As with the Mn content x higher than ∼5%. In this Letter, we carefully analyze the VB structure and the Fermi level position in a series of Ga 1−x Mn x As from the unexplored insulating region (x=∼0.01%) to the metallic region (x=3.2%). We find that the VB structure is not largely affected by the Mn doping and that the Fermi level never crosses over the VB near the MIT: The a) Electronic

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Activation Energy of Holes in Zn-Doped GaAs

Cited by 62 publications

References 14 publications

Investigation of electron mobility in GaAs‐based devices using genetic algorithm

Investigation of electron mobility in GaAs‐based devices using genetic algorithm

Electrical Properties of Polytypic Mg Doped GaAs Nanowires

Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism

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