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Quantum structures made from epitaxial semiconductor layers have revolutionized our understanding of low-dimensional systems and are used for ultrafast transistors, semiconductor lasers, and detectors. Strain induced by different lattice parameters and thermal properties offers additional degrees of freedom for tailoring materials, but often at the expense of dislocation generation, wafer bowing, and cracks. We eliminated these drawbacks by fast, low-temperature epitaxial growth of Ge and SiGe crystals onto micrometer-scale tall pillars etched into Si(001) substrates. Faceted crystals were shown to be strain- and defect-free by x-ray diffraction, electron microscopy, and defect etching. They formed space-filling arrays up to tens of micrometers in height by a mechanism of self-limited lateral growth. The mechanism is explained by reduced surface diffusion and flux shielding by nearest-neighbor crystals.

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Direct-gap gain up to 850 cm(-1) at 0.74 eV is measured and modeled in optically pumped Ge-on-Si layers for photoexcited carrier densities of 2.0 × 10(20) cm(-3). The gain spectra are correlated to carrier density via plasma-frequency determinations from reflection spectra. Despite significant gain, optical amplification cannot take place, because the carriers also generate pump-induced absorption of ≈7000 cm(-1). Parallel studies of III-V direct-gap InGaAs layers validate our spectroscopy and modeling. Our self-consistent results contradict current explanations of lasing in Ge-on-Si cavities.

We present a detailed study on polycrystalline transparent conducting Ta-doped TiO2 films, obtained by room temperature pulsed laser deposition followed by an annealing treatment at 550°C in vacuum. The effect of Ta as a dopant element and of different synthesis conditions are explored in order to assess the relationship between material structure and functional properties, i.e. electrical conductivity and optical transparency. We show that for the doped samples it is possible to achieve low resistivity (of the order of 5×10-4 Ωcm) coupled with transmittance values exceeding 80% in the visible range, showing the potential of polycrystalline Ta:TiO2 for application as a transparent electrode in novel photovoltaic devices. The presence of trends in the structural (crystalline domain size, anatase cell parameters), electrical (resistivity, charge carrier density and mobility) and optical (transmittance, optical band gap, effective mass) properties as a function of the oxygen background pressures and laser fluence used during the deposition process and of the annealing atmosphere is discussed, and points towards a complex defect chemistry ruling the material behavior. The large mobility values obtained in this work for Ta:TiO2 polycrystalline films (up to 13 cm2V-1s-1) could represent a definitive advantage with respect to the more studied Nb-doped TiO2