Integrated germanium optical interconnects on silicon substrates

Chaisakul, Papichaya; Marris‐Morini, Delphine; Frigerio, Jacopo; Chrastina, D.; Rouifed, Mohamed Saïd; Cecchi, Stefano; Crozat, P.; Isella, Giovanni; Vivien, Laurent

doi:10.1038/nphoton.2014.73

Cited by 215 publications

(151 citation statements)

References 45 publications

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“…CM attracts considerable interest because it can enhance performance of the currently available solar cells 1-5 and photo-detectors. 6 Conventionally, these devices operate on a single-photon-to-single-electron conversion basis. In that case, high-energy photons create energetic e-h pairs that cool down first before they are extracted in the form of electric current; i.e., a significant part of the incident light power is converted into heat.…”

Section: Introductionmentioning

confidence: 99%

Carrier multiplication in germanium nanocrystals

et al. 2015

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Carrier multiplication is demonstrated in a solid-state dispersion of germanium nanocrystals in a silicon-dioxide matrix. This is performed by comparing ultrafast photo-induced absorption transients at different pump photon energies below and above the threshold energy for this process. The average germanium nanocrystal size is approximately 5-6 nm, as inferred from photoluminescence and Raman spectra. A carrier multiplication efficiency of approximately 190% is measured for photo-excitation at 2.8 times the optical bandgap of germanium nanocrystals, deduced from their photoluminescence spectra.

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Section: Introductionmentioning

confidence: 99%

Carrier multiplication in germanium nanocrystals

et al. 2015

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“…Strain affects the energy states primarily through the conduction band deformation parameter a c and valence band deformation parameters l and m, as shown by the diagonal terms of Eq. (9), (10). For Ge and SiGe materials, a c FIG.…”

Section: Discussion Of the Barrier Width And Strain Distributionmentioning

confidence: 99%

“…Ge/SiGe quantum well has been investigated as an appealing CMOS compatible modulation material and shown good potentials in aspects of compact waveguide integration, 10 low driving voltage, 11,12 high speed operation and low energy consumption. 13 Owing to the quantum-confined Stark effect (QCSE), 14 the absorption spectra of Ge/SiGe quantum well have a red shift with electric field applied across the structure, first demonstrated in 2005.…”

Section: Introductionmentioning

confidence: 99%

“…To neutralize this effect, bias voltage of 2-5 V is required to perform at 1550 nm. 10,11,13,15,16 Thus the modulator is not convenient to integrate with electronic logic circuits. Moreover, the thick barrier reduces the overlap between optical field and effective absorption area in a waveguide configuration, as the electrons and holes are confined in the quantum wells.…”

Section: Introductionmentioning

confidence: 99%

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Design of low bias voltage Ge/SiGe multiple quantum wells electro-absorption modulator at 1550 nm

et al. 2017

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We design and simulate a Ge/SiGe multiple quantum wells (MQWs) modulator based on quantum confined Stark effect (QCSE) that operates at 1550 nm. By introducing a thick well and thin barrier in multiple quantum wells structure, the compressive strain of the Ge well is reduced and the absorption edge is shifted to the longer wavelength. An 8-band k⋅p model is employed to calculate the eigenstates and absorption spectra, and influences of quantum well parameters on the absorption property is analyzed and discussed. The numerical simulation indicates that the bias voltage is remarkably reduced to 0.5 V with 1 V voltage swing for 10 wells, while still maintaining over 5 dB absorption contrast ratio. The proposed Ge/SiGe modulator can be a potential approach compatible with traditional complementary metal-oxide-semiconductor (CMOS) technology and adoptable for integration with electronic components.

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“…However, due to the relatively large bandgap of silicon material, this kind of optical receiver could not detect valuable optical carriers with wavelengths of 1310 and 1550 nm, which are widely used in modern optical communication systems. Nevertheless, germanium (Ge) material with a narrow band gap can detect these light waves [7,8]. In the front-end of line Si CMOS process design, electronic transistors, and photonic devices are achieved simultaneously [9].…”

Section: Introductionmentioning

confidence: 99%

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

et al. 2017

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Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

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Integrated germanium optical interconnects on silicon substrates

Cited by 215 publications

References 45 publications

Carrier multiplication in germanium nanocrystals

Carrier multiplication in germanium nanocrystals

Design of low bias voltage Ge/SiGe multiple quantum wells electro-absorption modulator at 1550 nm

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

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