The impact of programlerase cycling on Flash memory cell is reviewed considering both performance degradation of the typical bit and the evolution of the erase threshold voltage distribution of the whole memory array. Emphasis is given to the failure mechanisms which affect Flash memory endurance: the erratic erase phenomenon is discussed with reference to the model recently reported in the literature and a new degradation mechanism, induced by parasitic drain stress conditions in program/erase cycling, is presented.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.