Over the last 20 years, silicon photonics has revolutionized the field of integrated optics, providing a novel and powerful platform to build mass-producible optical circuits. One of the most attractive aspects of silicon photonics is its ability to provide extremely small optical components, whose typical dimensions are an order of magnitude smaller than those of optical fiber devices. This dimension difference makes the design of fiberto-chip interfaces challenging and, over the years, has stimulated considerable technical and research efforts in the field. Fiber-to-silicon photonic chip interfaces can be broadly divided into two principle categories: in-plane and out-of-plane couplers. Devices falling into the first category typically offer relatively high coupling efficiency, broad coupling bandwidth (in wavelength), and low polarization dependence but require relatively complex fabrication and assembly procedures that are not directly compatible with wafer-scale testing. Conversely, out-of-plane coupling devices offer lower efficiency, narrower bandwidth, and are usually polarization dependent. However, they are often more compatible with high-volume fabrication and packaging processes and allow for on-wafer access to any part of the optical circuit. In this paper, we review the current state-of-the-art of optical couplers for photonic integrated circuits, aiming to give to the reader a comprehensive and broad view of the field, identifying advantages and disadvantages of each solution. As fiber-to-chip couplers are inherently related to packaging technologies and the co-design of optical packages has become essential, we also review the main solutions currently used to package and assemble optical fibers with silicon-photonic integrated circuits.

We present a simple and practical strategy that allows to design high-efficiency grating couplers. The technique is based on the simultaneous apodization of two structural parameters: the grating period and the fill-factor, along with the optimization of the grating coupler etching depth. Considering a 260 nm Si-thick Silicon-on-insulator platform, we numerically demonstrated a coupling efficiency of −0.8 dB (83%), well matching the experimental value of −0.9 dB (81%). Thanks to the optimized design, these results represent the best performance ever reported in the literature for SOI structures without the use of any back-reflector.

Nonlinear silicon photonic devices have attracted considerable attention thanks to their ability to show large third-order nonlinear effects at moderate power levels allowing for all-optical signal processing functionalities in miniaturized components. Although significant efforts have been made and many nonlinear optical functions have already been demonstrated in this platform, the performance of nonlinear silicon photonic devices remains fundamentally limited at the telecom wavelength region due to the two photon absorption (TPA) and related effects. In this work, we propose an alternative CMOS-compatible platform, based on silicon-rich silicon nitride that can overcome this limitation. By carefully selecting the material deposition parameters, we show that both of the device linear and nonlinear properties can be tuned in order to exhibit the desired behaviour at the selected wavelength region. A rigorous and systematic fabrication and characterization campaign of different material compositions is presented, enabling us to demonstrate TPA-free CMOS-compatible waveguides with low linear loss (~1.5 dB/cm) and enhanced Kerr nonlinear response (Re{γ} = 16 Wm−1). Thanks to these properties, our nonlinear waveguides are able to produce a π nonlinear phase shift, paving the way for the development of practical devices for future optical communication applications.

Recently, coherent control of the optical response of thin films in standing waves has attracted considerable attention, ranging from applications in excitation-selective spectroscopy and nonlinear optics to all-optical image processing. Here, we show that integration of metamaterial and optical fibre technologies allows the use of coherently controlled absorption in a fully fiberized and packaged switching metadevice. With this metadevice, which controls light with light in a nanoscale plasmonic metamaterial film on an optical fibre tip, we provide proof-of-principle demonstrations of logical functions XOR, NOT and AND that are performed within a coherent fibre network at wavelengths between 1530 and 1565 nm. The metadevice has been tested at up to 40 gigabits per second and sub-milliwatt power levels. Since coherent absorption can operate at the single-photon level and with 100 THz bandwidth, we argue that the demonstrated all-optical switch concept has potential applications in coherent and quantum information networks.

The ability to process optical signals without passing into the electrical domain has always attracted the attention of the research community. Processing photons by photons unfolds new scenarios, in principle allowing for unseen signal processing and computing capabilities. Optical computation can be seen as a large scientific field in which researchers operate, trying to find solutions to their specific needs by different approaches; although the challenges can be substantially different, they are typically addressed using knowledge and technological platforms that are shared across the whole field. This significant know-how can also benefit other scientific communities, providing lateral solutions to their problems, as well as leading to novel applications. The aim of this Roadmap is to provide a broad view of the state-of-the-art in this lively scientific research field and to discuss the advances required to tackle emerging challenges, thanks to contributions authored by experts affiliated to both academic institutions and high-tech industries. The Roadmap is organized so as to put side by side contributions on different aspects of optical processing, aiming to enhance the cross-contamination of ideas between scientists working in three different fields of photonics: optical gates and logical units, high bit-rate signal processing and optical quantum computing. The ultimate intent of this paper is to provide guidance for young scientists as well as providing research-funding institutions and stake holders with a comprehensive overview of perspectives and opportunities offered by this research field.

In recent years, silicon nitride has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (<350 • C) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 µm wavelength range.

In this paper, we determine the optical nonlinear coefficient of hydrogenated amorphous silicon (a-Si:H) waveguides. Up to date, the data reported in the scientific literature for similar structures show a very large variability and the final assessment of their nonlinear performance is still an open issue. We performed a complete and careful characterization of more than 50 waveguides. A nonlinear coefficient of 790 + j20 W−1 m−1 was found, confirming that a-Si:H is a good candidate for nonlinear silicon photonic devices. Nevertheless, free-carrier-dynamics exhibits a recombination time in the nanosecond range, which can hinder their exploitation in ultrafast applications requiring high-power optical beams.

We report on the generation of an optical comb of highly uniform in power frequency lines (variation less than 0.7 dB) using a silicon ring resonator modulator. A characterization involving the measurement of the complex transfer function of the ring is presented and five frequency tones with a 10-GHz spacing are produced using a dual-frequency electrical input at 10 and 20 GHz. A comb shape comparison is conducted for different modulator bias voltages, indicating optimum operation at a small forward-bias voltage. A time-domain measurement confirmed that the comb signal was highly coherent, forming 20.3-ps-long pulses.