The advances in information and communication technologies have been largely predicated around the increases in computer processor power derived from the constant miniaturization (and consequent higher density) of individual transistors. Transistor design has been largely unchanged for many years and progress has been around scaling of the basic CMOS device. Scaling has been enabled by photolithography improvements (i.e. patterning) and secondary processing such as deposition, implantation, planarization, etc. Perhaps the most important of the secondary processes is the plasma etch methodology whereby the pattern created by lithography is ‘transferred’ to the surface via a selective etch to remove exposed material. However, plasma etch technologies face challenges as scaling continues. Maintaining absolute fidelity in pattern transfer at sub-16 nm dimensions will require advances in plasma technology (plasma sources, chamber design, etc) and chemistry (etch gases, flows, interactions with substrates, etc). In this paper, we illustrate some of these challenges by discussing the formation of ultra-small device structures from the directed self-assembly of block copolymers (BCPs) where nanopatterns are formed from the micro-phase separation of the system. The polymer pattern is transferred by a double etch procedure where one block is selectively removed and the remaining block acts as a resist pattern for silicon pattern transfer. Data are presented which shows that highly regular nanowire patterns of feature size below 20 nm can be created using etch optimization techniques and in this paper we demonstrate generation of crystalline silicon nanowire arrays with feature sizes below 8 nm. BCP techniques are demonstrated to be applicable from these ultra-small feature sizes to 40 nm dimensions. Etch profiles show rounding effects because etch selectivity in these nanoscale resist patterns is limited and the resist thickness rather low. The nanoscale nature of the topography generated also places high demands on developing new etch processes.

Lamellae (symmetric) forming polystyrene‐b‐poly(4‐vinylpyridine) (PS‐b‐P4VP) block copolymers (BCPs) were used to produce nanostructured thin films by solvent (toluene) casting (spin‐coating) onto silicon substrates. As expected, strong micellization of PS‐P4VP in toluene results in poorly ordered hexagonally structures films. Following deposition the films were solvent annealed in various solvents and mixtures thereof. A range of both morphologies including micelle and microphase separated structures were observed. It was found that nanostructures typical of films of regular thickness (across the substrate) and demonstrating microphase separation occurred only for relatively few solvents and mixtures. The data demonstrate that simple models of solvent annealing based on swelling of the polymer promoting higher polymer chain mobility are not appropriate and more careful rationalization is required to understand these data. Analysis suggests that regular phase separated films can only be achieved when the copolymer Hildebrand solubility parameter is very similar to the value of the solvent. It is suggested that the solvent anneal method used is best considered as a liquid phase technique rather than a vapor phase method. The results show that solvent annealing methods can be a very powerful means to control structure and in some circumstances dominate other factors such as surface chemistry and surface energies. Copyright © 2009 John Wiley & Sons, Ltd.

Random copolymer brushes of styrene and methyl methacrylate (MMA) on silicon wafers by atom transfer radical polymerization (ATRP) are synthesized using CuCl/CuCl2/HMTETA. It is found that with increasing amount of styrene the thickness of the brush layer could no longer be well controlled by the amount of free (sacrificial) initiator in the reaction. At constant concentration of free initiator a constant thickness is obtained for various ratios of MMA to styrene. Within 30–70% MMA in the monomer feed the composition of the free polymer corresponds well to the monomer feed ratio, displaying a water contact angle in agreement with the theoretical value for a random copolymer. These copolymers are shown to create a neutral surface directing spin‐coated poly(styrene‐b‐MMA) into a perpendicular lamellae orientation.

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