A 512K-bit nonvolatile magneto resistive memory with a switched-capacitor self-referencing sensing scheme is reported. This memory is economical since it requires only one mask beyond a typical CMOS process and has rad hard, scalable, and no wear-out properties.This memory has a cell size of 2.8 X 10 pm', logic buried under its cells, and a 0.3 cmz die. It is useful for disk caches and for replacing plated wire memories in aerospace applications.
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