A CMOS process compatible high density magnetoresistive memory

A 512 K-bit magneto resistive memory with switched capacitor self-referencing sensing

“…Generalized Sampling Theorem: Let f(t) be a function of one variable. If a one-to-one continuous mapping g(t) exists such that g(f(t)) is band-limited, i.e., its Fourier transform G f ( w ) = 0 for 101 2 wo = ?r/T,, and if f(t) is sampled at the points t, nT,, then f(t) can be uniquely determined in terms of f ( t n ) as ( 2 ) where g-' is the inversion of g.…”

“…The prototype 512K-bit design is for a CMOS process that uses one extra mask to form the memory cells [2]. During fabrication, over the semiconductor circuitry the first layer of metal is deposited with the MR multilayer (Fig.…”

“…The theorem is stated below as the Sampling Theorem[2].Sampling Theorem: If f(t) is a function of one variable having a Fourier transform F ( w ) such that F ( w ) = 0 for IwI 2 wo = .rr/T,, and is sampled at the points t , = nT,, then f ( t ) can be reconstructed exactly from its samples f(nT,) as follows:3c f(t) = c f(nT,)sin[w,(t -nT,)I/[wo(t -nT,)I. (1) n = -x Since the original work, the sampling theorem has been extended into various versions.…”