In this paper, we investigate the spectral response of whispering-gallery-mode (WGM) resonators coupled to their access waveguide with a view to design their constitutive waveguides to promote critical-coupling over a wide spectral range and thereby facilitate their use for high-sensitivity sensing or nonlinear frequency conversion applications. The carried-out theoretical analysis is based on the universal response functions of singlemode and unidirectional devices. A coupled-mode treatment of the coupling region enables to derive two sets of favorable designs. The identified resonator/access waveguide systems exploit waveguides with mismatched propagation constants forming a coupling section exhibiting either an achromatic beat-length or an achromatic power-transfer coefficient. This generic model is followed by a numerical case study of vertically-coupled Si3N4 racetrack resonators. The conventional (quasi-)phase-matched configuration, treated as a reference case, is shown to display a critical-coupling bandwidth of 23 nm at a wavelength of 1550nm, whereas the proposed new designs demonstrate critical bandwidths larger than 330nm, i.e. exhibit bandwidths enhanced by more than one order of magnitude.
In this article, we apply the coupled-mode theory to vertically-coupled micro-disk resonators presenting an asymmetric distribution of refractive index and a multilayer separation region between the two waveguide cores, resulting in an effective propagation constant phase-mismatch in the coupling region. We introduce a criterion which, given the coupler overall permittivity distribution, clarifies how to best choose the individual decomposition index profiles among the various possible solutions. Following our recent experimental demonstration we subsequently exploit the derived decomposition to evaluate the theoretical transmission characteristics of an AlGaAs/AlOx-based structure as function of wavelength and as function of the position of the resonator relative to the access waveguide.We show that the resonant dips of the intensity transmission, spaced by the cavity FSR, are modulated by an envelop which governs the coupling regime of the resonator-waveguide system.
This article reports the experimental and theoretical assessments of the optical characteristics of recently-introduced vertically-coupled microdisk resonators made by selective oxidation of AlGaAs multilayer structures. Experimental measurements show that the Q-factors are in the 10 3 to 10 4 range for diameters ranging from 75 to 300 µm. To establish the origins of this limited performance a coupled-mode-theory-based model of the single-access-waveguide-coupled resonator system was developed. It includes features which are specific to oxide-based vertically-coupled resonators, namely losses towards the slab waveguide lying under the resonator and a coupling region with an asymmetric and multilayer structure. Setting this simulation tool required the proposal and validation of a general criterion to select an appropriate set of decomposition permittivity profiles to be able to accurately model the characteristics of these more complex couplers using the coupled-mode-theory approach. This theoretical development is generic and can be now deployed to simulate any device which includes multi-waveguide couplers with arbitrary piece-wise-constant profile of the dielectric permittivity. Exploiting this particular development and experimental measurements of the disk sidewall roughness and of the coupling lengths, the calculated and experimental Q-factors are found to be in good agreement and allow establishing that the current performance is limited by the scattering losses and the slab-leakage losses for small-and large-diameter devices respectively.
Integrated whispering-gallery mode resonators are attractive devices which have found applications as selective filters, low-threshold lasers, high-speed modulators, high-sensitivity sensors and even as nonlinear converters. Their performance is governed by the level of detrimental (scattering, bulk, bending) loss incurred and the usable loss represented by the coupling rate between the resonator and its access waveguide. Practically, the latter parameter can be more accurately controlled when the resonator lies above the access waveguide, in other words, when the device uses a vertical integration scheme. So far, when using such an integration technique, the process involved a rather technically challenging step being either a planarization or a substrate transfer step. In this presentation, we propose and demonstrate an alternative method to fabricate vertically-coupled whispering-gallery mode resonators on III-V semiconductor epitaxial structures which has the benefit of being planarization-free and performed as single-side top-down process. The approach relies on a selective lateral thermal oxidation of aluminum-rich AlGaAs layers to define the buried access waveguide and enhance the vertical confinement of the whispering-gallery mode into the resonator. As a first experimental proof-of-principle of this approach, 75 µm-diameter micro-disk devices exhibiting quality factor reaching ~4500 have been successfully made.
No abstract
Sponsored and Published by SPIELaserThe papers in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. Additional papers and presentation recordings may be available online in the SPIE Digital Library at SPIEDigitalLibrary.org.The papers reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon.Please use the following format to cite material from these proceedings: Author ( Copying of material in this book for internal or personal use, or for the internal or personal use of specific clients, beyond the fair use provisions granted by the U.S. Copyright Law is authorized by SPIE subject to payment of copying fees. The Transactional Reporting Service base fee for this volume is $18.00 per article (or portion thereof), which should be paid directly to the Copyright Clearance Center (CCC), 222 Rosewood Drive, Danvers, MA 01923. Payment may also be made electronically through CCC Online at copyright.com. Other copying for republication, resale, advertising or promotion, or any form of systematic or multiple reproduction of any material in this book is prohibited except with permission in writing from the publisher. The CCC fee code is 0277-786X/17/$18.00.Printed in the United States of America.Publication of record for individual papers is online in the SPIE Digital Library. SPIEDigitalLibrary.orgPaper Numbering: Proceedings of SPIE follow an e-First publication model. A unique citation identifier (CID) number is assigned to each article at the time of publication. Utilization of CIDs allows articles to be fully citable as soon as they are published online, and connects the same identifier to all online and print versions of the publication. SPIE uses a seven-digit CID article numbering system structured as follows: The first five digits correspond to the SPIE volume number. The last two digits indicate publication order within the volume using a Base 36 numbering system employing both numerals and letters. These two-number sets start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B … 0Z, followed by 10-1Z, 20-2Z, etc. The CID Number appears on each page of the manuscript.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.