Using
the strip-guided “manufacturable” SOI/GeSn
group-IV integrated-photonics platform operating at 1550 nm, we propose
an optical-to-electrical-to-optical (O-E-O) device that can work either
as an amplifierless optical repeater with gain, as a linear-optics
wavelength-converter repeater, or as a new “optical–optical”
logic (OOL) gate. An interconnected array of such linear-optics gates
performs complicated digital-logic functions. The OEO comprises a
photodetector (PD), an electro-optical modulator (EOM), and an electrical
biasing-and-interconnect circuit. A digitally modulated optical signal
is sent into a waveguided photoconductive GeSn PIN PD whose electrical
output is compatible with the electrical input of a resonant bus-coupled
Si PN-depletion microdisk EOM modulating a CW optical input beam.
Our self-consistent physical model takes into account N and P doping
effects. Assuming a peak optical input power of 0.5 mW and 3 V DC
bias, our 1.55 μm simulations predict successful repeater-converter
operation at 6.5 GHz (13 Gbit/s) and successful OOL functioning at
4.7 GHz (9.4 Gbit/s), with 12-to-16 dB extinction ratio and switching
energy in the 5.8 to 9.6 fJ/bit range. A further increase of the OOL
bit rate to 14 Gbit/s is available at the expense of an increased
optical signal power.