Intracavity semiconductor saturable absorber mirrors (SESAM's) offer unique and exciting possibilities for passively pulsed solid-state laser systems, extending from Q-switched pulses in the nanosecond and picosecond regime to mode-locked pulses from 10's of picoseconds to sub-10 fs. This paper reviews the design requirements of SESAM's for stable pulse generation in both the mode-locked and Q-switched regime. The combination of device structure and material parameters for SESAM's provide sufficient design freedom to choose key parameters such as recovery time, saturation intensity, and saturation fluence, in a compact structure with low insertion loss. We have been able to demonstrate, for example, passive modelocking (with no Qswitching) using an intracavity saturable absorber in solid-state lasers with long upper state lifetimes (e.g., 1-m neodymium transitions), Kerr lens modelocking assisted with pulsewidths as short as 6.5 fs from a Ti:sapphire laser-the shortest pulses ever produced directly out of a laser without any external pulse compression, and passive Q-switching with pulses as short as 56 ps-the shortest pulses ever produced directly from a Qswitched solid-state laser. Diode-pumping of such lasers is leading to practical, real-world ultrafast sources, and we will review results on diode-pumped Cr:LiSAF, Nd:glass, Yb:YAG, Nd:YAG, Nd:YLF, Nd:LSB, and Nd:YVO 4. I. HISTORICAL BACKGROUND AND INTRODUCTION A.

The use of a saturable absorber as a passive mode locker in a solid-state laser can introduce a tendency for Q-switched mode-locked operation. We have investigated the transition between the regimes of cw mode locking and Q-switched mode locking. Experimental data from Nd:YLF lasers in the picosecond domain and soliton mode-locked Nd:glass lasers in the femtosecond domain, both passively mode locked with semiconductor saturable absorber mirrors, were compared with predictions from an analytical model. The observed stability limits for the picosecond lasers agree well with a previously described model, while for soliton mode-locked femtosecond lasers we have developed an extended theory that takes into account nonlinear soliton-shaping effects and gain filtering.

We review recent achievements with ultrafast bulk lasers and amplifiers based on Yb:YAG and Yb:glass. Special attention is paid to those aspects of the quasi-three-level nature of these gain media that are important for short-pulse generation. The potential of Yb-doped media for efficient short-pulse generation and amplification is compared to their Nd-doped counterparts.

We demonstrate a passively mode-locked diode-pumped thin-disk Yb:YAG laser generating 810-fs pulses at 1030 nm with as much as 60 W of average output power (without using an amplifier). At a pulse repetition rate of 34.3 MHz, the pulse energy is 1.75 microJ and the peak power is as high as 1.9 MW. The beam quality is close to the diffraction limit, with M2 < 1.1.