We investigate a configurationally locked polyene (CLP) crystal 2‐(3‐(4‐hydroxystyryl)‐5,5‐dimethylcyclohex‐2‐enylidene)malononitrile (OH1) containing a phenolic electron donor, which also acts as a hydrogen bond donor. The OH1 crystals with orthorhombic space group Pna21 (point group mm2) exhibit large second‐order nonlinear optical figures of merit, high thermal stability and very favorable crystal growth characteristics. Higher solubility in methanol and a larger temperature difference between the melting temperature and the decomposition temperature of OH1 compared to analogous CLP crystals, are of advantage for solution and melt crystal growth, respectively. Acentric bulk OH1 crystals of large sizes with side lengths of up to 1 cm with excellent optical quality have been successfully grown from methanol solution. The microscopic and macroscopic nonlinearities of the OH1 crystals are investigated theoretically and experimentally. The OH1 crystals exhibit a large macroscopic nonlinearity with four times larger powder second harmonic generation efficiency than that of analogous CLP crystals containing dimethylamino electron donor. A very high potential of OH1 crystals for broadband THz wave emitters in the full frequency range of 0.1–3 THz by optical rectification of 160 fs pulses has been demonstrated.
Broadband THz pulses have been generated in 2-[3-(4- hydroxystyryl)-5,5-dimethylcyclohex-2-enylidene]malononitrile (OH1) by optical rectification of sub-picosecond laser pulses. We show that OH1 crystals allow velocity-matched generation and detection of THz frequencies in the whole range between 0.3 and 2.5 THz for a pump laser wavelength range from 1200 to 1460 nm. OH1 crystals show a higher figure of merit for THz generation and detection in the optimized range compared to the benchmark inorganic semiconductor crystals ZnTe and GaAs and the organic ionic salt crystal 4-N,N-dimethylamino-4'-N'-methyl stilbazolium tosylate (DAST). The material shows a low THz absorption coefficient alpha3 in the range between 0.3 and 2.5 THz, reaching values lower than 0.2mm(-1) between 0.7 and 1.0 THz. This is similar as in ZnTe and GaAs, but much lower than in DAST in the respective optimum frequency range. A peak THz electric field of 100 kV/cm and a photon conversion efficiency of 11 percent have been achieved at a pump pulse energy of 45 microJ.
We demonstrate what is to our knowledge the first mode-locked Yb:KGd(WO(4))(2) laser. Using a semiconductor saturable-absorber mirror for passive mode locking, we obtain pulses of 176-fs duration with an average power of 1.1 W and a peak power of 64 kW at a center wavelength of 1037 nm. We achieve pulses as short as 112 fs at a lower output power. The laser is based on a standard delta cavity and pumped by two high-brightness laser diodes, making the whole system very simple and compact. Tuning the laser by means of a knife-edge results in mode-locked pulses within a wavelength range from 1032 to 1054 nm. In cw operation, we achieve output powers as high as 1.3 W.
We demonstrate a passively mode-locked diode-pumped thin-disk Yb:YAG laser generating 810-fs pulses at 1030 nm with as much as 60 W of average output power (without using an amplifier). At a pulse repetition rate of 34.3 MHz, the pulse energy is 1.75 microJ and the peak power is as high as 1.9 MW. The beam quality is close to the diffraction limit, with M2 < 1.1.
We demonstrate what is to our knowledge the first passively mode-locked thin-disk Yb:KY(WO(4))(2) laser. The laser produces pulses of 240-fs duration with an average power of 22 W at a center wavelength of 1028 nm. At a pulse repetition rate of 25 MHz, the pulse energy is 0.9microJ , and the peak power is as high as 3.3 MW. The beam quality is very close to the diffraction limit, with M(2)=1.1 .
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