Ultrafast ytterbium-doped bulk lasers and laser amplifiers

Hönninger, Clemens; Paschotta, Rüdiger; Zhang, G.; Biswal, S. K.; Morier-Genoud, F.; M., Moser,; Giesen, Adolf; Mourou, G.; Nees, J.; Seeber, W.; Johannsen, I.; Graf, M.; Keller, U.; Braun, A.

doi:10.1007/s003400050762

Cited by 215 publications

(125 citation statements)

References 66 publications

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“…The low power mode-locked laser in Ref. [9] used a 3.5-mm long 5 at.% Yb-doped YAG crystal. A standing-wave cavity is used, which leads to 7 mm total gain length per cavity roundtrip.…”

Section: Expected Pulse Duration In the Thin Disk Configurationmentioning

confidence: 99%

“…It was selected because of its easy growth, high gain cross section compared to other Ybdoped laser materials, relaxed demands on the pump diodes and thermomechanical strength to sustain high power levels. The limited gain bandwidth of Yb:YAG does not support pulse durations shorter than approximately 700 fs in efficient high-power thin disk operation [8] even if pulses as short as 340 fs have been achieved in low-power SESAMmode-locked laser oscillators [9]. Longer pulse durations can easily be achieved by inserting a spectral filter into the thin disk laser cavity [8].…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, it requires a pump wavelength in the blue-green spectral region, for which no high-power diodes are available. Among the directly diode pumpable gain materials, Yb-doped materials are particularly promising [9,15,16]. So far there have been more than ten Yb-doped host materials that generated sub-100-fs pulses in a standard bulk gain medium mode-locked laser oscillator design (see Table 2).…”

Section: Introductionmentioning

confidence: 99%

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High-power ultrafast thin disk laser oscillators and their potential for sub-100-femtosecond pulse generation

et al. 2009

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Ultrafast thin disk laser oscillators achieve the highest average output powers and pulse energies of any mode-locked laser oscillator technology. The thin disk concept avoids thermal problems occurring in conventional high-power rod or slab lasers and enables high-power TEM 00 operation with broadband gain materials. Stable and self-starting passive pulse formation is achieved with semiconductor saturable absorber mirrors (SESAMs). The key components of ultrafast thin disk lasers, such as gain material, SESAM, and dispersive cavity mirrors, are all used in reflection. This is an advantage for the generation of ultrashort pulses with excellent temporal, spectral, and spatial properties because the pulses are not affected by large nonlinearities in the oscillator. Output powers close to 100 W and pulse energies above 10 µJ are directly obtained without any additional amplification, which makes these lasers interesting for a growing number of industrial and scientific applications such as material processing or driving experiments in high-field science. Ultrafast thin disk lasers are based on a power-scalable concept, and substantially higher power levels appear feasible. However, both the highest power levels and pulse energies are currently only achieved with Yb:YAG as the gain material, which limits the gain bandwidth and therefore the achievable pulse duration to 700 to 800 fs in It is important to evaluate their suitability for power scaling in the thin disk laser geometry. In this paper, we review the development of ultrafast thin disk lasers with shorter pulse durations. We discuss the requirements on the gain materials and compare different Yb-doped host materials. The recently developed sesquioxide materials are particularly promising as they enabled the highest optical-tooptical efficiency (43%) and shortest pulse duration (227 fs) ever achieved with a mode-locked thin disk laser.

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“…The low power mode-locked laser in Ref. [9] used a 3.5-mm long 5 at.% Yb-doped YAG crystal. A standing-wave cavity is used, which leads to 7 mm total gain length per cavity roundtrip.…”

Section: Expected Pulse Duration In the Thin Disk Configurationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-power ultrafast thin disk laser oscillators and their potential for sub-100-femtosecond pulse generation

et al. 2009

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“…Recently, there has been growing interest in Yb 3C -doped laser materials for high-power ultra-short-pulse lasers. 27 However, we find Nd 3C : YVO 4 much simpler in the initial alignment and overall operation requirements.…”

Section: Improved Designmentioning

confidence: 73%

Advanced instrumentation for non‐linear Raman microscopy

Yakovlev¹

2003

J Raman Spectroscopy

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Over the past several years, there was a renaissance of non-linear Raman microscopy based on coherent anti-Stokes Raman spectroscopy. We propose and experimentally implement a novel approach to construct an apparatus for non-linear Raman imaging. The complete set-up can be constructed for <$50 000 and can be used for a large variety of spectroscopic applications including CARS microscopy and non-linear optical sensing.

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“…3. The maximum of r abs (Yb 3þ )in the prepared sample can be seen at 967 nm and it is calculated to be 1.46 Â 10 À20 cm 2 which is larger than that of Yb 3þ doped YAG crystal (0.75 Â 10 À20 cm 2 ), 31 The energy-transfer probability can be evaluated by the overlap integral between donor emission and acceptor absorption cross section spectra. 32 In Fig.…”

Section: A Thermal Stabilitymentioning

confidence: 93%

Intense 2.0 μm emission properties and energy transfer of Ho3+/Tm3+/Yb3+ doped fluorophosphate glasses

Tian

et al. 2011

Journal of Applied Physics

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Intense 2.0 lm emission has been obtained from Ho 3þ /Tm 3þ /Yb 3þ triply doped fluorophosphate glass pumped by a conventional 980 nm laser diode. The spectroscopic properties and energy transfer mechanisms between Ho 3þ , Tm 3þ and Yb 3þ are analyzed. Based on the absorption spectra, the JuddOfelt parameters, radiation emission rates, radiative lifetime and branching ratios of Ho 3þ ions are calculated. It is also found that the 2.0 lm emission of Ho 3þ can be greatly enhanced under the excitation at 980 nm by incorporating Tm 3þ and Yb 3þ simultaneously. Additionally, the microparameters of the energy transfer processes are quantitatively analyzed. The energy transfer coefficient from Yb 3þ to acceptors and from Tm 3þ to Ho 3þ can reach as high as 13.14 Â 10 À40 cm 6 /s and 23.39 Â 10 À40 cm 6 /s, respectively. This Ho 3þ /Tm 3þ /Yb 3þ doped fluorophosphate glass possessing high energy transfer coefficient and excellent thermal stability is a promising candidate for efficient 2.0 lm laser.

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Ultrafast ytterbium-doped bulk lasers and laser amplifiers

Cited by 215 publications

References 66 publications

High-power ultrafast thin disk laser oscillators and their potential for sub-100-femtosecond pulse generation

High-power ultrafast thin disk laser oscillators and their potential for sub-100-femtosecond pulse generation

Advanced instrumentation for non‐linear Raman microscopy

Intense 2.0 μm emission properties and energy transfer of Ho3+/Tm3+/Yb3+ doped fluorophosphate glasses

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