Benefiting from these unique properties, the power conversion efficiency (PCE) of perovskite solar cells (PSCs) has rapidly increased from initial ≈3% to now 25.5%, [7][8][9] situating it at the forefront of the third-generation solar cells. [10,11] Unfortunately, these ionic hybrid perovskite materials are extremely sensitive to light, [12,13] heat, [14] and moisture, [15] resulting in unstable crystal structures. During the past decade, numerous passivating methods have been developed to enhance both efficiency and long-term stability of hybrid PSCs. [16][17][18] In these polycrystalline perovskite films, defects formed at either surface or grain boundaries have been widely reported to significantly restrict carriers transport and crystal stability, which further deteriorates the device performance. [19,20] Indeed, a large number of defects are generated during the film crystallization process due to the low formation energy and soft lattice character of the perovskite crystals. [21,22] Besides, the ionic nature of hybrid halide perovskite leads to unfavorable carrier recombination and ion migration in the perovskite films, resulting in unsatisfactory efficiency or stability of the devices. [23,24] In particular, the crystallization process is accompanied by the ubiquitous formation of imperfections at grain boundaries and surfaces, metallic lead clusters, and intrinsic point defects. [24][25][26] Among them, intrinsic site Organic-inorganic hybrid lead halide perovskite solar cells have made unprecedented progress in improving photovoltaic efficiency during the past decade, while still facing critical stability challenges. Herein, the natural organic dye Indigo is explored for the first time to be an efficient molecular passivator that assists in the preparation of high-quality hybrid perovskite film with reduced defects and enhanced stability. The Indigo molecule with both carbonyl and amino groups can provide bifunctional chemical passivation for defects. In-depth theoretical and experimental studies show that the Indigo molecules firmly binds to the perovskite surfaces, enhancing the crystallization of perovskite films with improved morphology. Consequently, the Indigo-passivated perovskite film exhibits increased grain size with better uniformity, reduced grain boundaries, lowered defect density, and retarded ion migration, boosting the device efficiency up to 23.22%, and ≈21% for large-area device (1 cm 2 ). Furthermore, the Indigo passivation can enhance device stability in terms of both humidity and thermal stress. These results provide not only new insights into the multipassivation role of natural organic dyes but also a simple and low-cost strategy to prepare high-quality hybrid perovskite films for optoelectronic applications based on Indigo derivatives.
The discovery of lead-free piezoelectric materials is crucial for future information and energy storage applications. Enhanced piezoelectric and other physical properties are commonly observed near the morphotropic phase boundary (MPB) composition of ferroelectric solid solutions. The (1-x)Ba(Zr 0.2 Ti 0.8 )O 3 -x(Ba 0.7 Ca 0.3 )TiO 3 (BZT-xBCT) system exhibits a large electromechanical response around its MPB region at x=0.5. We report experimental and theoretical results of BZT-xBCT over a wide composition range (0.3≤x≤1.0). X-ray diffraction and Raman spectroscopy studies indicate a composition-induced structural phase transition from a rhombohedral (R3m) phase at x≤0.4 to a tetragonal (P4mm) phase at x≥0.6 through a multiphase coexistence region at 0.45≤x≤0.55 involving orthorhombic + tetragonal (Amm2+P4mm) phases. First-principles calculations elucidate the phase competition in the coexistence region. The critical composition (x= 0.5) displays enhanced dielectric, ferroelectric and piezoelectric properties, where notably d 33 ~ 320 pC/N. This work provides clear evidence of Amm2+P4mm crystallographic phases in the MPB region, which is responsible for the improved functional properties.
All‐inorganic CsPbX3 (X = Cl, Br, I, or mixed halides) perovskite quantum dots (QDs) exhibit tunable optical bandgaps and narrow emission peaks, which have received worldwide interest in the field of both photovoltaics (PVs) and light‐emitting diodes (LEDs). Herein, it is reported a discovery that CsPbI3 perovskite QD solar cell can simultaneously deliver high PV performance and intense electroluminescence. In specific, the multifunctional CsPbI3 QD film is fabricated through a simple yet efficient solid‐state‐ligand exchange process using a tailored organic ligand triphenyl phosphite (TPPI). The function of QD surface manipulation using TPPI here is proven to be twofold, balancing the carrier transport and effectively passivating the QD surface to produce conductive and emissive QD film. The CsPbI3 perovskite QD solar cell delivers a champion efficiency of 15.21% with improved open circuit voltage and high fill factor. Concurrently functioning as a red LED, the CsPbI3 perovskite QD solar cell outputs electric power to light conversion efficiency approaching 4%, a record value for QD electroluminescent PVs. The results here indicate that these versatile perovskite QDs may be a promising candidate for fabricating multifunctional optoelectronic devices.
Structural defects are ubiquitous for polycrystalline perovskite films, compromising device performance and stability. Herein, a universal method is developed to overcome this issue by incorporating halide perovskite quantum dots (QDs) into perovskite polycrystalline films. CsPbBr3 QDs are deposited on four types of halide perovskite films (CsPbBr3, CsPbIBr2, CsPbBrI2, and MAPbI3) and the interactions are triggered by annealing. The ions in the CsPbBr3 QDs are released into the thin films to passivate defects, and concurrently the hydrophobic ligands of QDs self‐assemble on the film surfaces and grain boundaries to reduce the defect density and enhance the film stability. For all QD‐treated films, PL emission intensity and carrier lifetime are significantly improved, and surface morphology and composition uniformity are also optimized. Furthermore, after the QD treatment, light‐induced phase segregation and degradation in mixed‐halide perovskite films are suppressed, and the efficiency of mixed‐halide CsPbIBr2 solar cells is remarkably improved to over 11% from 8.7%. Overall, this work provides a general approach to achieving high‐quality halide perovskite films with suppressed phase segregation, reduced defects, and enhanced stability for optoelectronic applications.
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