Dans cet article les auteurs décrivent la synthèse et les propriétés physico‐chimiques de nouvelles pyrido[2,3‐d]pyrimidinediones‐2,4 mono ou disubstituées.
&SUME:L'Ctude prkliminaire des propriCtCs microlithographiques des rCsines obtenues en mClangeant un polyimide et un bis-azide a pennis de montrer que de telles rCsines pourraient probablement Ctre utilisCes en tant que resines microlithographiques sensibles aux UV lointains. En effet ces rCsines donnent des couchages homogbnes qui ont des Cpaisseurs convenables. De plus, elles sont trbs sensibles aux irradiations: elles subissent alors des modifications de structure lorsqu'on les irradie par des radiations de longueur d'onde Cgale ? i 254 nm. Les parties ainsi insolCes sont insolubles dans les solvants constituCs par des melanges d'eau et de dioxane ou d'eau et de 1 -N-mCthylpyrrolidone alors que ces mCmes solvants solubilisent parties non in-solCes.
SUMMARY.A preliminary study of the microlithographic properties of resins obtained by mixing a polyimide with a bis-azide has shown the possibility to be used in the far UV.The solutions of the resins are easily processed to give films with a good control of the thickness. Moreover, the films obtained are sensitive to UV irradiation at 254 nm. The irradiated parts are insoluble in a mixture of solvents constituted of water and dioxane or water and 1 -N-methylpyrrolidone, whereas the non-irradiated regions are soluble in these solvent mixtures.Les resines photosensibles sont celles qui sont le plus utiliskes en microlithographie. Parmi elles, on trouve celles qui absorbent dans 1'UV proche (320 nm c h c 400 nm). Cependant la photolithographie dans le proche UV
The study of a photoresist containing poly(p‐trimethylsiloxystyrene) (1, poly[1‐(4‐trimethyl‐siloxyphenyl)ethylene]) mixed with (C6H5)3SAsF6, which could be employed in a bilevel pattern‐transfer process, is reported. The onium salt undergoes efficient photolysis under UV radiation, to generate strong acids, responsible of the cleayage of the silicon‐containing side groups. The first results obtained show that this kind of resist could be used in microlithography, because it displays a very good sensitivity to deep UV and an excellent resistance to oxygen plasma. The syntheses of the compounds and substances used in this work are described.
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