Etude des propriétés microlithographiques d'une résine siliciée renfermant en mélange le poly(p‐triméthylsiloxystyrène) et le sel (C₆H₅)₃SAsF₆

Abstract

The study of a photoresist containing poly(p‐trimethylsiloxystyrene) (1, poly[1‐(4‐trimethyl‐siloxyphenyl)ethylene]) mixed with (C6H5)3SAsF6, which could be employed in a bilevel pattern‐transfer process, is reported. The onium salt undergoes efficient photolysis under UV radiation, to generate strong acids, responsible of the cleayage of the silicon‐containing side groups. The first results obtained show that this kind of resist could be used in microlithography, because it displays a very good sensitivity to deep UV and an excellent resistance to oxygen plasma. The syntheses of the compounds and substances used in this work are described.

Progress in the chemistry of organosilicon resists

“…Bonfils et al [52] report the synthesis and microlithographic properties of an OSR based on poly(ptrimethylsiloxystyrene) mixtures with TPS-AsF, .…”

Silylated poly(4-hydroxystyrene)s as negative electron beam resists

“…1 Silylated poly(4-hydroxystyrene)s have been investigated for short wavelength photolithography because of their acid labile silyl ether groups. 2,3 A dry-developed resist process of utilizing vapor phase silylation of poly(4-hydroxystyrene) combined with oxygen reactive ion etching (O 2 RIE) has also been proposed. 4 However, the silyl ether polymers of poly(4-hydroxystyrene ) have not yet been examined for EB lithography.…”

Silylated poly(4‐hydroxystyrene)s as negative electron beam resists

“…1 Silylated poly(4-hydroxystyrene)s have been investigated for short wavelength photolithography because of their acid labile silyl ether groups. 2,3 A dry-developed resist process of utilizing vapor phase silylation of poly(4hydroxystyrene) combined with oxygen reactive ion etching (O 2 RIE) has also been proposed. 4 However, the silyl ether polymers of poly(4-hydroxystyrene ) have not yet been examined for EB lithography.…”