Single magnetic atoms, and assemblies of such atoms, on non-magnetic surfaces have recently attracted attention owing to their potential use in high-density magnetic data storage and as a platform for quantum computing. A fundamental problem resulting from their quantum mechanical nature is that the localized magnetic moments of these atoms are easily destabilized by interactions with electrons, nuclear spins and lattice vibrations of the substrate. Even when large magnetic fields are applied to stabilize the magnetic moment, the observed lifetimes remain rather short (less than a microsecond). Several routes for stabilizing the magnetic moment against fluctuations have been suggested, such as using thin insulating layers between the magnetic atom and the substrate to suppress the interactions with the substrate's conduction electrons, or coupling several magnetic moments together to reduce their quantum mechanical fluctuations. Here we show that the magnetic moments of single holmium atoms on a highly conductive metallic substrate can reach lifetimes of the order of minutes. The necessary decoupling from the thermal bath of electrons, nuclear spins and lattice vibrations is achieved by a remarkable combination of several symmetries intrinsic to the system: time reversal symmetry, the internal symmetries of the total angular momentum and the point symmetry of the local environment of the magnetic atom.

We present an exact expansion of the master equation for an open quantum system. The resulting equation is time local and enables us to calculate clearly defined higher-order corrections to the Born-Markov approximation. In particular, we show that non-Markovian terms are of the same order of magnitude as higher-order terms in the system-bath coupling. As a result, we emphasize that analyzing non-Markovian behavior of a system implies going beyond the Born approximation. Additionally, we address with this approach the initial-state problem occurring in non-Markovian master equations.

We study a system of two quantum dots, each with several discrete levels, which are coherently coupled to a microwave oscillator. They are attached to electronic leads and coupled to a phonon bath, both leading to inelastic processes. For a simpler system with a single level in each dot it has been shown that a population inversion can be created by electron tunneling, which in a resonance situation leads to lasing-type properties of the oscillator. In the multi-level system several resonance situations may arise, some of them relying on a sequence of tunneling processes which also involve non-resonant, inelastic transitions. The resulting photon number in the oscillator and the currentvoltage characteristic are highly sensitive to these properties and accordingly can serve as a probe for microscopic details.

Due to underlying symmetries the ground states of magnetic adatoms may be highly stable, which opens perspectives for application as single-atom memory. A specific example is a single holmium atom (with $J=8$) on a platinum (111) surface for which exceptionally long lifetimes were observed in recent scanning tunneling microscopy studies. For control and read-out the atom must be coupled to electronic contacts. Hence the spin dynamics of the system is governed by a quantum master equation. Our analysis shows that in general it cannot be reduced to a classical master equation in the basis of the unperturbed crystal-field Hamiltonian. Rather, depending on parameters and control fields, "environment induced superselection" principles choose the appropriate set of basis states, which in turn determines the specific relaxation channels and lifetimes. Our simulations suggest that in ideal situations the lifetimes should be even longer than observed in the experiment. We, therefore, investigate the influence of various perturbations. We also study the initialization process of the state of the Ho atom by applied voltage pulses and conclude that fast, high fidelity preparation, on a $100\,\text{ns}$ timescale, should be possible.Comment: 14 pages, 11 figure

We study phonon emission in a GaAs/AlGaAs double quantum dot by monitoring the tunneling of a single electron between the two dots. We prepare the system such that a known amount of energy is emitted in the transition process. The energy is converted into lattice vibrations, and the resulting tunneling rate depends strongly on the phonon scattering and its effective phonon spectral density. We are able to fit the measured transition rates and see imprints of interference of phonons with themselves causing oscillations in the transition rates.