In this letter, we demonstrate the effectiveness of the controlled spalling technology for producing high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem solar cells. The controlled spalling technique was employed to separate the as-grown solar cell structure from the host Ge wafer followed by its transfer to an arbitrary Si support substrate. The structural and electrical properties of the thin-film tandem cells were examined and compared against those on the original bulk Ge substrate. The comparison of the electrical data suggests the equivalency in cell parameters for both the thin-film (spalled) and bulk (non-spalled) cells, confirming that the controlled spalling technology does maintain the integrity of all layers in such an elaborate solar cell structure.

Warming of the Arctic can stimulate microbial decomposition and release of permafrost soil carbon (C) as greenhouse gases, and thus has the potential to influence climate change. At the same time, plant growth can be stimulated and offset C release. This study presents a 15‐year time series comprising chamber and eddy covariance measurements of net ecosystem C exchange in a tundra ecosystem in Alaska where permafrost has been degrading due to regional warming. The site was a carbon dioxide source to the atmosphere with a cumulative total loss of 781.6 g C m−2 over the study period. Both gross primary productivity (GPP) and ecosystem respiration (Reco) were already likely higher than historical levels such that increases in Reco losses overwhelmed GPP gains in most years. This shift to a net C source to the atmosphere likely started in the early 1990s when permafrost was observed to warm and thaw at the site. Shifts in the plant community occur more slowly and are likely to constrain future GPP increases as compared to more rapid shifts in the microbial community that contribute to increased Reco. Observed rates suggest that cumulative net soil C loss of 4.18–10.00 kg C m−2—8%–20% of the current active layer soil C pool—could occur from 2020 to the end of the century. This amount of permafrost C loss to the atmosphere represents a significant accelerating feedback to climate change if it were to occur at a similar magnitude across the permafrost region.

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This paper introduces the modeling developed to assess the potential of a III-V/SiGe tandem device. Demonstration of value will be executed via materials and solar cell device models. III-V top cell candidates are evaluated and a high-value composition is identified. Initial windowless GaAsP solar cells demonstrate a bandgap-voltage offset of 0.58.

GaAsP/SiGe dual-junction solar cells have been grown on silicon substrates which have the potential of achieving tandem efficiencies of 40%. This lattice-matched structure facilitates high performance from the III-V top cell while maintaining the cost advantages of silicon solar cells. The SiGe graded buffer allows for lattice matching of the top and bottom cell while providing a low dislocation interface between the silicon substrate and the device layers. Initial structures have reached an efficiency of 18.9%. Near term improvements to 25.0% under AM1.5G will be described.Index Terms -tandem solar cells, gallium arsenide phosphide, semiconductor materials, silicon germanium.