H atom produced in the thermal decomposition of CH(3)OH highly diluted in Ar (0.48-10 ppm) was monitored behind reflected shock waves by atomic resonance absorption spectrometry (ARAS) at fixed temperatures (and pressures), that is, 1660 (1.73 atm), 1760 (2.34 atm), 1860 (2.04 atm), 1950 (2.18 atm), and 2050 K (1.76 atm) (+/-10 K, respectively). High sensitivity for the H atom has been attained by signal averaging of the ARAS signals down to the concentrations of approximately 1 x 10(11) atoms/cm(3) and enables us to determine the branching fraction for the direct H atom production channel, CH(3)OH --> CH(2)OH + H (channel 1c ) in a mixture of 1 ppm CH(3)OH. Channel 1c is confirmed to be minor, that is, branching fraction for channel 1c is expressed by Log(k(1c)/k(1)) = (- 2.88 +/- 1.88) x 10(3)/T - (0.23 +/- 1.02), which corresponds to k(1c)/k(1) < 0.03 for the present temperature range. By using 0.48 and 1.0 ppm CH(3)OH with (100-1000) ppm H(2), the total decomposition rate k(1) for CH(3)OH --> products is measured from the time dependence of H atom, where the radical products of main channels 1a and 1b , that is, OH, CH(3), and CH(2), were converted rapidly into H atoms. The experimental result is summarized as Log(k(1)/cm(3)molecule(-1)s(-1)) = (-12.82 +/- 0.71) x 10(3)/T - (8.5 +/- 0.38). A theoretical study based on ab initio/TST calculations with high accuracy has been conducted for the reaction: (3)CH(2) + H(2) --> CH(3) + H (reaction 3 ). The rate is given by k(3)/cm(3)molecule(-1) s(-1) = (7.32 x 10(-19))T(2.3) exp (-3699/T). This result is used for numerical simulations to evaluate k(1). Present experimental results on the thermal decomposition rate of CH(3)OH are found to be consistent with previous works. It is also found that time dependence of [H] observed in the 10 ppm CH(3)OH in Ar can be reproduced very well by kinetic simulations by using a reaction mechanism composed of 36 elementary reactions.

We report fabrication processes of indium gallium zinc oxide (IGZO) and low temperature poly silicon (LTPS) hybrid TFTs array technology. And the SiOx/IGZO interface quality modification and the performance of different thickness of active layer of IGZO device has been investigated by positive gate bias temperature stress method. The optimum processes conditions have been used on the 1.4" inch circular LCD to improve and pass operation tests of high temperature operation (HTO) 274hrs and temperature-humidity-bias (THB) 462 hrs to reach mass production phase.

Because of the unique property, the low leakage current of crystalline indium gallium zinc oxide (c-IGZO) thin film transistors (TFTs), it can archive the low power consumption of a panel within low frame rate driving. Low temperature poly-silicon (LTPS) TFTs as components of shift register circuit can fulfill small border size. The c-IGZO TFTs for pixel switch and the LTPS TFTs for gate driver on array backplane have been both deposited on glass substrate. We demonstrate a prototype of 1.4 inch circular LCD with c-IGZO and LTPS hybrid backplane technology to achieve small border size and low power consumption. And the panel shows good picture quality without flickering when very low frame rate driving (6Hz). In addition, the optical property and crystallinity of c-IGZO have been studied in this work.

Micro-light-emitting diodes (micro-LEDs) have been regarded as the important next-generation display technology, and a comprehensive and reliable modeling method for the design and optimization of characteristics of the micro-LED is of great use. In this work, by integrating the electrical simulation with the optical simulation, we conduct comprehensive simulation studies on electrical and optical/emission properties of real InGaN-based flip-chip micro-LED devices. The integrated simulation adopting the output of the electrical simulation (e.g., the non-uniform spontaneous emission distribution) as the input of the optical simulation (e.g., the emission source distribution) can provide more comprehensive and detailed characteristics and mechanisms of the micro-LED operation than the simulation by simply assuming a simple uniform emission source distribution. The simulated electrical and emission properties of the micro-LED were well corroborated by the measured properties, validating the effectiveness of the simulation. The reliable and practical modeling/simulation methodology reported here shall be useful to thoroughly investigate the physical mechanisms and operation of micro-LED devices.

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