12‐4: Late-News Paper: Reliability Improvement of IGZO and LTPS Hybrid TFTs Array Technology

Abstract

We report fabrication processes of indium gallium zinc oxide (IGZO) and low temperature poly silicon (LTPS) hybrid TFTs array technology. And the SiOx/IGZO interface quality modification and the performance of different thickness of active layer of IGZO device has been investigated by positive gate bias temperature stress method. The optimum processes conditions have been used on the 1.4" inch circular LCD to improve and pass operation tests of high temperature operation (HTO) 274hrs and temperature-humidity-bias (THB) 462 hrs to reach mass production phase.

Reliability improvement of IGZO‐TFT in hybrid process with LTPS

“…Some researchers have reported a hybrid pixel circuit of LTPS and oxide TFT (IGZO) to overcome this problem. [3][4][5][6][7][8][9][10][11] In our previous work, we reported our hybrid technology. 12 Figure 1A shows our proposed pixel circuit.…”

“…However, using only p‐LTPS pixel circuit, it is difficult to realize low refresh rate driving due to high off leakage current of p‐LTPS. Some researchers have reported a hybrid pixel circuit of LTPS and oxide TFT (IGZO) to overcome this problem 3–11 . In our previous work, we reported our hybrid technology 12 .…”

High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

“…Beside, using oxide and LTPS transistors in panel circuits for low power consumption display has been reported 6–12 . In this paper, we have proposed high refresh rate and low power consumption OLED panel, by simultaneously utilizing both p‐LTPS and n‐type indium–gallium–zinc–oxide (n‐IGZO).…”

24‐4: Distinguished Paper: High Refresh Rate and Low Power Consumption AMOLED Panel Using Top‐gate n‐Oxide and p‐LTPS TFTs

“…Beside, using oxide and LTPS transistors in panel circuits for low power consumption display has been reported [6][7][8][9][10][11][12]. In this paper, we have proposed high refresh rate and low power consumption OLED panel, by simultaneously utilizing both p-LTPS and n-type Indium-Gallium-Zinc-Oxide (n-IGZO).…”