The preparation of nanocomposite as gate dielectric film was carried out by blending polyimide and nano-TiO 2 particle to enhance the capacitance of gate dielectric. When the concentration of the nano-TiO 2 particle was less than 2 vol % and was well dispersed in polyimide slurry, a nanocomposite film with a homogeneous distribution of nano-TiO 2 particles in polyimide and low roughness was obtained after curing at 200 C, resulting in low leakage current density of the nanocomposite film and high on/off ratio of the organic thin film transistor (OTFT) device. A strong correlation between the morphology and electrical properties of the nanocomposite gate dielectric film is reflected in the OTFT device performance. Because capacitance of the gate dielectric film and proportion of thin film phase of the pentacene both increased when the pentacene was deposited on a nanocomposite gate dielectric film, the mobility and the threshold voltage of OTFT noticeably improved.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.