Hole trapping at cation vacancies in doped, irradiated silver halides is studied by means of electron paramagnetic resonance (EPR). From detailed studies of the behavior of the EPR spectra upon thermal annealing and of the effects of the concentrations of various divalent cations, it is demonstrated that in AgCl the positive hole can indeed be bound to the negative cation vacancy.The resulting two types of paramagnetic centers, which survive up to 70 and 110 K, respectively, are identified as perturbed self-trapped hole centers with a cation vacancy in either the nextnearest-neighbor or nearest-neighbor position in the equatorial plane, respectively. In addition, the perturbing cation vacancy is determined to be an isolated vacancy, free from any nearby divalent cation. In AgBr, however, no corresponding EPR effects due to the interaction between the hole and the cation vacancy have been observed.
A highly oriented, (100) textured diamond film was grown on a Si substrate, followed by the deposition of an epitaxial boron-doped layer for electrical characterization. Temperature-dependent Hall effect measurements were performed between 180 and 440 K. The 165 cm2/V⋅s hole mobility measured at room temperature is approximately five times greater than the highest reported mobilities for polycrystalline diamond. The relative improvement in the electronic quality of diamond films grown on Si, due to the reduction of misorientation and grain boundary angles, has been demonstrated. X-ray diffraction pole measurements were performed on the (100) oriented film in order to quantify the degree of misorientation.
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