In this work, we study the performances of ring resonators of different type by analyzing the bending loss and the condition of the critical coupling. We propose that the bending loss of microring can be reduced by wrapping a concentrically curved waveguide. The difference of propagation constant between two concentrically curved waveguides can be tuned by adjusting the bus waveguide width to optimize the critical coupling. Furthermore, we propose to enlarge the difference of the propagation constant between two concentrically curved waveguides to maintain the circulating light in the ring to obtain higher quality factor. In this study, the highest quality factor that we measured is 7 × 105.

No abstract

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

Mobile computers are now increasingly applied to facilitate face‐to‐face collaborative learning. However, the factors affecting face‐to‐face peer interactions are complex as they involve rich communication media. In particular, non‐verbal interactions are necessary to convey critical communication messages in face‐to‐face communication. Through gathering discourse and non‐verbal interaction records, this study explores the peer interactions supported by two collaborative applications: one with mobile computers and the other with shared‐display groupware (SDG). The results show that the students tended to interact with each other according to a distributed and an unsocial interaction pattern when using the application with mobile computers. In contrast, the students who learned with the SDG demonstrated a shared interaction pattern, whereby they often jointly focused on and referred to the shared work. The analysis of the students' work further found that a higher level of discussion was generally associated with the shared interaction pattern. The results seem to support SDG as being useful in augmenting face‐to‐face peer interaction supported by mobile computers. The implications derived from the findings also support the argument that non‐verbal interaction records are useful for quantitatively and qualitatively analysing face‐to‐face peer interactions.

Abstract. This investigation presents an initial attempt toanalyze a full year of daily ionosonde observations relevant to the determination of plasma densities, tidal structures, and ion transports in the equatorial anomaly region of the lower ionosphere. Particular focus is on the intermediate layers, their seasonal and diurnal variations, and cause-effect relationships. The ionogram database was recorded using a digisonde portable sounder (DPS) at National Central University (NCU, 24 • 58 N, 121 • 11 E) during 1996. Statistical results indicate that the intermediate layers appear primarily during the daytime of the spring/winter months. The monthly median height characteristics reveal that the layers descend from high to low altitudes and different tidal motions control the layers in different months. Generally, the semi-diurnal and quarter-diurnal tides, which cause ionization convergence, are mainly in the spring/winter and summer/autumn months, respectively. Variations in the electron densities of the layers also indicate that the density increases could result from a great number of molecular and metallic ions. Furthermore, a novel approach to ionogram presentation is introduced to investigate the intermediate layers. This approach allows the DPS to characterize the detailed daily information of the intermediate layers.

In this paper, we describe a thermal embossing imprint method, which we name "nano-imprinting in metal" (NIM), for patterning metal films with a variety of profiles. Metal films exhibiting either perforated hole-arrays or corrugated structures with various surface morphologies can be fabricated rapidly. The SPR phenomenon allowed energy coupling to the other side of the textured metal film, causing a dramatic increase in the transmission. As a technique for readily controlling the working wavelength and transmittance, the NIM method has great potential for application in various optoelectronic devices.

The output power enhancement of the GaN-based light-emitting diodes (LEDs) featuring two-dimensional (2D) hole arrays is demonstrated. The 2D air hole arrays were first generated in the photoresist by utilizing the focusing nature of microspheres, and then transferred onto the GaN surface through dry etching. The maximum output power of the surface-textured LEDs was enhanced by 45% compared with the LEDs without surface texturing. The finite-difference time-domain calculation was performed and revealed that the light extraction efficiency of the textured LEDs increased with increasing etching depth.

We report plasma-enhanced chemical vapor deposition (PECVD) hydrogenated nano-crystalline silicon (nc-Si:H) thin films. In particular, the effect of hydrogen dilution ratio (R = H 2 /SiH 4) on structural and optical evolutions of the deposited nc-Si:H films were systematically investigated including Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR) and low angle X-ray diffraction spectroscopy (XRD). Measurement results revealed that the nc-Si:H structural evolution, primarily the transition of nano-crystallization from the amorphous state to the nanocrystalline state, can be carefully induced by the adjustment of hydrogen dilution ratio (R). In addition, an in situ plasma diagnostic tool of optical emission spectroscopy (OES) was used to further characterize the crystallization rate index (H α */SiH*) that increases when hydrogen dilution ratio (R) rises, whereas the deposition rate decreases. Another in situ plasma diagnostic tool of quadruple mass spectrometry (QMS) also confirmed that the "optimal" range of hydrogen dilution ratio (R = 30-40) can yield nano-crystalline silicon (n-Si:H) growth due to the depletion of higher silane radicals. A good correlation between the plasma characteristics by in situ OES/QMS and the film characteristics by XRD, Raman and FTIR, for the transition of a-Si:H to nc-Si:H film from the hydrogen dilution ratio, was obtained.