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AcknowledgementThis work has been carried out with the financial help of the European Community (FEDER). AbstractThe work presented in this paper is concemed with the effects of a High Temperature Gate Bias (HTGB) and a High Temperature Reverse Bias (HTRB) stresses on Non-Punch-Through IGBTs. The stresses were achieved during 1200 hours at 140°C. A particular interest was taken in the parameters related to the switching mode operation and experimental results on their evolution under the two types of stress are presented in a quantified way. A qualitative analysis of the switching times effects, due to the IGBTs ageing, on a Pulse Width Modulation (PWM) inverter operation is presented. IdOL 2005 -I)resden 90-75815-08-5 0.2 DEl 2005 -L)i--;c11i ISBN :90-75815-08-5 i,.2