Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress

AcknowledgementThis work has been carried out with the financial help of the European Community (FEDER). AbstractThe work presented in this paper is concemed with the effects of a High Temperature Gate Bias (HTGB) and a High Temperature Reverse Bias (HTRB) stresses on Non-Punch-Through IGBTs. The stresses were achieved during 1200 hours at 140°C. A particular interest was taken in the parameters related to the switching mode operation and experimental results on their evolution under the two types of stress are presented in a quantified way. A qualitative analysis of the switching times effects, due to the IGBTs ageing, on a Pulse Width Modulation (PWM) inverter operation is presented. IdOL 2005 -I)resden 90-75815-08-5 0.2 DEl 2005 -L)i--;c11i ISBN :90-75815-08-5 i,.2

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Bipolar transistors under positive and negative gate bias stress

Maïga¹,

Tala-Ighil²,

Toutah³

et al. 2005

Proceedings of the IEEE International Symposium on Industrial Electronics, 2005. ISIE 2005.

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Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress

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Trench insulated gate bipolar transistors submitted to high temperature bias stress

Trench insulated gate bipolar transistors submitted to high temperature bias stress

Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution

Bipolar transistors under positive and negative gate bias stress

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