Behaviour of punch-through and non-punch-through insulated gate bipolar transistors under high temperature gate bias stress

Maïga, Cheick Oumar; Tala-Ighil, Boubekeur; Toutah, H.; Boudart, B.

doi:10.1109/isie.2004.1571956

Cited by 6 publications

(6 citation statements)

References 4 publications

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“…Dynamic parameters are suitable for in-situ monitoring. The oxide damage that affects the threshold voltage also affects the switching parameters, such as turn-on and turn-off times [7]. The switching parameters are also dynamic parameters and are therefore potential failure precursors that are suitable for continuous monitoring in application.…”

Section: Hybrid Phm Methodologymentioning

confidence: 99%

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Failure precursors for insulated gate bipolar transistors (IGBTs)

Patil

Das

Goebel

et al. 2008

9th International Seminar on Power Semiconductors (ISPS 2008)

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Section: Hybrid Phm Methodologymentioning

confidence: 99%

“…IGBTs have a positive temperature co-efficient for the collector emitter ON voltage at high collector currents [7] as seen in Figure 7. With an increase in temperature, the collector-emitter voltage value increases.…”

Section: Collector Emitter On Voltagementioning

confidence: 99%

Failure precursors for insulated gate bipolar transistors (IGBTs)

Patil

Das

Goebel

et al. 2008

9th International Seminar on Power Semiconductors (ISPS 2008)

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“…IGBT is rugged, but it suffers degradation due to excess electrical and thermal stress [7][8][9]. The IGBT's are commonly used in the low and medium power static converters.…”

Section: Introductionmentioning

confidence: 99%

“…However, the phenomenon of ageing of the IGBT's has formed the subject of only few investigations essentially due to the complexity of their internal structure and the multiplicity of involved phenomena. Some recent and interesting studies have been published on this problem [7][8].…”

Section: Introductionmentioning

confidence: 99%

A real-time fault diagnosis system for UPS based on FFT frequency analysis

Shim

Kim

Jung³

et al. 2010

2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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UPS provides emergency power when utility power is not available, so the reliability of UPS is more important than inverter drive systems. In this paper, a fault diagnosis system for UPS is proposed using FFT frequency analysis of output current of inverter side of UPS under linear and nonlinear load conditions. Software PLL for precise synchronization of one period sampling and double buffer memory for real time processing are proposed. Experimental results show the increase of even harmonics including dc offset in case of fault conditions such as increase of resistance and delay or misfiring of IGBT turn-on, and prove the possibility of UPS fault diagnosis system if the criteria for fault decision are well defined.

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“…Nevertheless, these studies did not take into account the device technology and were not interested in the various parameters linked to the switching mode operation. These parameters are of great importance for devices intended to be used in a static power converter; and that is why a large and systematic examination of the ageing of different structures of this device under various electric stresses is undertaken [6], [7]. We present in this paper a quantified and compared study of effects of a high temperature reverse bias and a high temperature gate bias stresses on Non-Punch-Through IGBTs.…”

Section: Introductionmentioning

confidence: 99%

Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution

Maïga¹,

Tala-Ighil²,

Toutah³

et al. 2005

2005 European Conference on Power Electronics and Applications

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AcknowledgementThis work has been carried out with the financial help of the European Community (FEDER). AbstractThe work presented in this paper is concemed with the effects of a High Temperature Gate Bias (HTGB) and a High Temperature Reverse Bias (HTRB) stresses on Non-Punch-Through IGBTs. The stresses were achieved during 1200 hours at 140°C. A particular interest was taken in the parameters related to the switching mode operation and experimental results on their evolution under the two types of stress are presented in a quantified way. A qualitative analysis of the switching times effects, due to the IGBTs ageing, on a Pulse Width Modulation (PWM) inverter operation is presented. IdOL 2005 -I)resden 90-75815-08-5 0.2 DEl 2005 -L)i--;c11i ISBN :90-75815-08-5 i,.2

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Behaviour of punch-through and non-punch-through insulated gate bipolar transistors under high temperature gate bias stress

Cited by 6 publications

References 4 publications

Failure precursors for insulated gate bipolar transistors (IGBTs)

Failure precursors for insulated gate bipolar transistors (IGBTs)

A real-time fault diagnosis system for UPS based on FFT frequency analysis

Non-punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses-hard-switching performances evolution

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