2004 IEEE International Symposium on Industrial Electronics 2004
DOI: 10.1109/isie.2004.1571956
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Behaviour of punch-through and non-punch-through insulated gate bipolar transistors under high temperature gate bias stress

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Cited by 6 publications
(6 citation statements)
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“…Dynamic parameters are suitable for in-situ monitoring. The oxide damage that affects the threshold voltage also affects the switching parameters, such as turn-on and turn-off times [7]. The switching parameters are also dynamic parameters and are therefore potential failure precursors that are suitable for continuous monitoring in application.…”
Section: Hybrid Phm Methodologymentioning
confidence: 99%
See 1 more Smart Citation
“…Dynamic parameters are suitable for in-situ monitoring. The oxide damage that affects the threshold voltage also affects the switching parameters, such as turn-on and turn-off times [7]. The switching parameters are also dynamic parameters and are therefore potential failure precursors that are suitable for continuous monitoring in application.…”
Section: Hybrid Phm Methodologymentioning
confidence: 99%
“…IGBTs have a positive temperature co-efficient for the collector emitter ON voltage at high collector currents [7] as seen in Figure 7. With an increase in temperature, the collector-emitter voltage value increases.…”
Section: Collector Emitter On Voltagementioning
confidence: 99%
“…IGBT is rugged, but it suffers degradation due to excess electrical and thermal stress [7][8][9]. The IGBT's are commonly used in the low and medium power static converters.…”
Section: Introductionmentioning
confidence: 99%
“…However, the phenomenon of ageing of the IGBT's has formed the subject of only few investigations essentially due to the complexity of their internal structure and the multiplicity of involved phenomena. Some recent and interesting studies have been published on this problem [7][8].…”
Section: Introductionmentioning
confidence: 99%
“…Nevertheless, these studies did not take into account the device technology and were not interested in the various parameters linked to the switching mode operation. These parameters are of great importance for devices intended to be used in a static power converter; and that is why a large and systematic examination of the ageing of different structures of this device under various electric stresses is undertaken [6], [7]. We present in this paper a quantified and compared study of effects of a high temperature reverse bias and a high temperature gate bias stresses on Non-Punch-Through IGBTs.…”
Section: Introductionmentioning
confidence: 99%