Failure precursors for insulated gate bipolar transistors (IGBTs)

Abstract

Abstract

Probabilistic Monte-Carlo Method for Modelling and Prediction of Electronics Component Life

“…Accelerated aging approaches such as thermal cycling and electrical overstress are used in IGBT accelerate aging experiments to speed up the degradation and failure of the IGBT in experiments environments which simulate the scenarios of industrial practical application. Precursor parameters, such as collector voltages, collector currents, gate voltages and currents, and environmental parameters such as temperature are monitored and recorded to be utilized for IGBT diagnosis and prognosis research [13].…”

Application of coupled electro-thermal and physics-of-failure-based analysis to the design of accelerated life tests for power modules

“…If there is a change in the current observations compared to the previous trend observed from the healthy product, it signifies that degradation is taking place. This technique assumes that there is a measurable effect that can be monitored during operation, for example a change in voltage, current or temperature compared to the expected profile [33]. Precursor techniques have been successfully applied to monitor the degradation of selected thermal interfaces e.g.…”

A hierarchical control architecture for a PEBB-based ILC Marx modulator

“…An example of a precursor parameter is the collectoremitter saturation voltage of an IGTB [10]. The failure of bond wires causes a change in either the contact resistance or the internal current distribution, such that it can be identified by monitoring the collector-emitter saturation voltage.…”