Pin access has become one of the most difficult challenges for detailed routing in advanced technology nodes, for example, in 14nm and below, for which double-patterning lithography has to be used for manufacturing lower metal routing layers with tight pitches, such as M2 and M3. Self-aligned double patterning (SADP) provides better control on line edge roughness and overlay, but it has very restrictive design constraints and prefers regular layout patterns. This article presents a comprehensive pin-access planning and regular routing framework (PARR) for SADP friendliness. Our key techniques include precomputation of both intracell and intercell pin accessibility, as well as local and global pin-access planning to enable handshaking between standard cell-level pin access and detailed routing under SADP constraints. A pin access–driven rip-up and reroute scheme is proposed to improve the ultimate routability. Our experimental results demonstrate that PARR can achieve much better routability and overlay control compared with previous approaches.
Pin access has become one of the most difficult challenges for detailed routing in 14nm technology node and beyond, where double patterning lithography has to be used for manufacturing lower metal layers with tight pitches. Self-aligned double patterning (SADP) provides better control on the line edge roughness and overlay but it has very restrictive design constraints and prefers regular layout patterns. This paper presents a comprehensive pin access planning and regular routing framework (PARR) for SADP friendliness. Our key techniques include pre-computation of both intra-cell and inter-cell pin accessibility, as well as local and global pin access planning to enable the handshaking between standard cell level pin access and detailed routing under SADP constraints. Our experimental results demonstrate that PARR can achieve much better routability and overlay control compared with previous approaches.
This chapter reviews recent practices of tackling aging and yield issues in VLSI design related to shrinking technology processes. Different fundamental effects such as device aging, interconnect electromigration, and process variations are investigated with the state-of-the-art techniques for modeling and optimization. The presented techniques vary from analytical approaches to machine learning, and often require cross-layer information feedback for robust design cycles.
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