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We reported on a two-dimensional simulation of electrical properties of the radio frequency ͑rf͒ sputter amorphous In-Ga-Zn-O ͑a-IGZO͒ thin-film transistors ͑TFTs͒. The a-IGZO TFT used in this work has the following performance: field-effect mobility ͑ eff ͒ of ϳ12 cm 2 / V s, threshold voltage ͑V th ͒ of ϳ1.15 V, subthreshold swing ͑S͒ of ϳ0.13 V / dec, and on/off ratio over 10 10. To accurately simulate the measured transistor electrical properties, the density-of-states model is developed. The donorlike states are also proposed to be associated with the oxygen vacancy in a-IGZO. The experimental and calculated results show that the rf sputter a-IGZO TFT has a very sharp conduction band-tail slope distribution ͑E a = 13 meV͒ and Ti ohmic-like source/drain contacts with a specific contact resistance lower than 2.7ϫ 10 −3 ⍀ cm 2 .

Tissue plasminogen activator is the only treatment option for stroke victims; however, it has to be administered within 4.5 h after symptom onset, making its use very limited. This report describes a unique target for effective treatment of stroke, even 12 h after onset, by the administration of αB-crystallin (Cryab), an endogenous immunomodulatory neuroprotectant. In Cryab −/− mice, there was increased lesion size and diminished neurologic function after stroke compared with wild-type mice. Increased plasma Cryab was detected after experimental stroke in mice and after stroke in human patients. Administration of Cryab even 12 h after experimental stroke reduced both stroke volume and inflammatory cytokines associated with stroke pathology. Cryab is an endogenous anti-inflammatory and neuroprotectant molecule produced after stroke, whose beneficial properties can be augmented when administered therapeutically after stroke.

CMP that helps patients navigate the health care system and access social and medical resources show significant promise in reducing ED utilization.

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The density of states (DOS) and energy band structure of crystalline In-Ga-Zn-O (c-IGZO) and the impact of point defects on its electronic structure are investigated by first-principles calculations based on the density function theory. The calculated DOS showed that the p-orbitals of the oxygen atoms mostly contribute to the valance band maximum (VBM) of c-IGZO. The conduction band minimum (CBM) is dominated by s-orbitals of the Zn/Ga mixture atoms, while the In atoms have the largest spatial spread of wave function. Oxygen vacancies create fully occupied defect states within the band gap and serve as deep donors. Both hydrogen substitutions and interstitials act like shallow donors, and raise the Fermi level above the CBM. Oxygen split interstitials created fully occupied defect states above VBM, while oxygen octahedral interstitials create both occupied and unoccupied states, and may serve as acceptors.

In this paper, we analyze application of amorphous In-Ga-Zn-O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compare to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the drive TFT threshold voltage variation (ÁV T ) within acceptable operating error range.

Solution-processed organic thin-film field-effect transistors ͑OFETs͒ were fabricated using a precursor form of the organic semiconductor tetrabenzoporphyrin ͑TBP͒ deposited on a thermal silicon oxide gate insulator patterned with nanometer-scale trenches. Thermal conversion of the precursor film to TBP was enhanced by ordered TBP aggregation in the prepatterned trenches, demonstrating precise control and placement of long-and short-range ordering of the organic semiconductor. OFETs with channels parallel to trench direction growth were found to have field-effect mobility approaching one order of magnitude greater than transistors fabricated with the channel oriented perpendicular to dendrimer growth.