. We report on semi‐metallic cobalt monosilicide (CoSi) as a CMOS‐compatible thermoelectric (TE) material and discuss the effect of n‐ and p‐type dopants on its transport properties. Thin films of CoSi are developed using chemical vapor deposition tools and subsequent rapid thermal processing. Film properties such as microstructure, crystallinity and elemental distribution are studied via electron microscopy, X‐ray diffraction and time‐of‐flight secondary ion mass spectroscopy. Doping silicon with boron prior to silicidation impedes the Co‐Si diffusion process, while phosphorus atoms distribute uniformly in silicides with no voids or agglomerations. CoSi makes a suitable n‐type TE candidate and provides an alternative to Si or SiGe materials. Transport properties of undoped CoSi exhibit a linear dependence within the investigated temperature window, whereas dopants in CoSi increase the number of electron carriers that contribute to charge transport and thereby influence the Seebeck coefficient. Thus, TE characteristics of thin CoSi films can be tuned via (i) the type of dopants used and/or (ii) varying the residual silicon thickness post silicidation.
Cobalt oxides are a promising anode material for lightweight rechargeable lithium-ion batteries. Thus, the low temperature deposition of cobalt oxide is a key-technology for the production of flexible energy storage systems enabling novel application opportunities such as wearables. To satisfy the emerging process requirements the dicobaltatetrahedrane precursor [Co 2 (CO) 6 (h 2 -H-C^C-n C 5 H 11 )] was investigated for the low-temperature chemical vapor deposition of cobalt oxides. Oxygen, water vapor and a combination of both were examined as possible co-reactants. In particular, wet oxygen proves to be an appropriate oxidizing agent providing dense and high purity cobalt oxide films within the examined temperature range from 130 C to 250 C. Film growth occurred at temperatures as low as 100 C making this process suitable for the coating of temperature-sensitive and flexible substrates.
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