CMOS-compatible transition metal disilicide for integrated thermoelectric applications

Nichenametla, Charan K.; Calvo, Jesús; Dhavamani, Abitha; Drescher, Maximilian; Göhler, Tim; Wagner-Reetz, Maik

doi:10.1016/j.matpr.2019.02.057

Cited by 2 publications

(1 citation statement)

References 13 publications

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“…Silicidation occurred at temperatures above 500 °C, as indicated by reflections in the XRD patterns that are associated with the cubic CoSi phase (FeSi‐type). At temperatures above 600 °C, Co starts to consume more Si to form other silicide phases that are not of our interest in this work and are investigated elsewhere . For this reason, the annealing temperature was set to 500 °C for the silicidation on a–Si:P substrates.…”

Section: Resultsmentioning

confidence: 99%

Doping Effects in CMOS‐compatible CoSi Thin Films for Thermoelectric and Sensor Applications

Nichenametla

Calvo

Riedel

et al. 2020

Zeitschrift anorg allge chemie

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. We report on semi‐metallic cobalt monosilicide (CoSi) as a CMOS‐compatible thermoelectric (TE) material and discuss the effect of n‐ and p‐type dopants on its transport properties. Thin films of CoSi are developed using chemical vapor deposition tools and subsequent rapid thermal processing. Film properties such as microstructure, crystallinity and elemental distribution are studied via electron microscopy, X‐ray diffraction and time‐of‐flight secondary ion mass spectroscopy. Doping silicon with boron prior to silicidation impedes the Co‐Si diffusion process, while phosphorus atoms distribute uniformly in silicides with no voids or agglomerations. CoSi makes a suitable n‐type TE candidate and provides an alternative to Si or SiGe materials. Transport properties of undoped CoSi exhibit a linear dependence within the investigated temperature window, whereas dopants in CoSi increase the number of electron carriers that contribute to charge transport and thereby influence the Seebeck coefficient. Thus, TE characteristics of thin CoSi films can be tuned via (i) the type of dopants used and/or (ii) varying the residual silicon thickness post silicidation.

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Section: Resultsmentioning

confidence: 99%

Doping Effects in CMOS‐compatible CoSi Thin Films for Thermoelectric and Sensor Applications

Nichenametla

Calvo

Riedel

et al. 2020

Zeitschrift anorg allge chemie

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300 mm CMOS-compatible fabrication of Ru2Si3 sub-50 nm thin films and characterization

Hertel

Schwinge

Gerlich

et al. 2022

Applied Physics Letters

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We report the thermoelectric characterization of Ru2Si3 thin films. Ruthenium (VI)-silicide was formed via silicidation by rapid thermal processing of ruthenium on amorphous, undoped silicon of different thicknesses (sub-50 nm). 300 mm wafer level processes were applied, utilizing physical and chemical vapor deposition methods. High-temperature-XRD, energy dispersive x-ray spectroscopy, transmission electron microscopy, and time-of-flight secondary ion mass spectrometry confirm the formation of single-phase Ru2Si3 thin films. Thermoelectric measurements reveal exceptionally high Seebeck coefficients of up to 1.5 mV/K close to room temperature in dependence of adjustable oxide nanoskins. Due to the thermal stability of the nanoskins, fine-tuning of the thermoelectric properties by rapid thermal processing could be applied in a large temperature range.

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CMOS-compatible transition metal disilicide for integrated thermoelectric applications

Cited by 2 publications

References 13 publications

Doping Effects in CMOS‐compatible CoSi Thin Films for Thermoelectric and Sensor Applications

Doping Effects in CMOS‐compatible CoSi Thin Films for Thermoelectric and Sensor Applications

300 mm CMOS-compatible fabrication of Ru2Si3 sub-50 nm thin films and characterization

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