Low-temperature chemical vapor deposition of cobalt oxide thin films from a dicobaltatetrahedrane precursor

Melzer, Marcel; Nichenametla, Charan K.; Georgi, Colin; Lang, Heinrich; Schulz, Stefan E.

doi:10.1039/c7ra08810h

Cited by 15 publications

(4 citation statements)

References 44 publications

(50 reference statements)

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“…The CVD experiments of Melzer et al [ 32 ] demonstrated a precursor reaction with O 2 in the temperature region from 130 to 250 °C to form cobalt oxide. The deposition experiments by Georgi et al showed a CVD-based layer formation of metallic cobalt at 250 °C with the cobalt precursor [ 23 ].…”

Section: Resultsmentioning

confidence: 99%

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Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

Franz,

Safian Jouzdani,

Kaßner

et al. 2023

Beilstein J. Nanotechnol.

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In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] and hydrogen plasma. For this precursor an ALD window in the temperature range between 50 and 110 °C was determined with a constant deposition rate of approximately 0.1 Å/cycle. The upper limit of the ALD window is defined by the onset of the decomposition of the precursor. In our case, decomposition occurs at temperatures of 125 °C and above, resulting in a film growth in chemical vapour deposition mode. The lower limit of the ALD window is around 35 °C, where the reduction of the precursor is incomplete. The saturation behaviour of the process was investigated. X-ray photoelectron spectroscopy measurements could show that the deposited cobalt is in the metallic state. The finally established process in ALD mode shows a homogeneous coating at the wafer level.

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Section: Resultsmentioning

confidence: 99%

“…The CVD experiments of Melzer et al [32] cobalt at 250 °C with the cobalt precursor [23]. Based on these previous results, the initial deposition temperature for cobalt metal CVD was set to 150 °C and was decreased successively for further processes.…”

Section: Resultsmentioning

confidence: 99%

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

Franz,

Safian Jouzdani,

Kaßner

et al. 2023

Beilstein J. Nanotechnol.

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“…For example, Amin-Chalhoub et al 38 recently reported the formation of pure CoO film via conventional CVD using Co 2 (CO) 8 precursor at temperatures between 120 • C and 190 • C without additional oxygen source. In another notable study made by Melzer et al 34 using dicobaltatetrahedrane precursor in CVD, oxygen, water vapors and a combination of both were incorporated as possible co-reactants for the formation of pure CoO or Co 3 O 4 and a mixture of both by changing processing temperatures. The CVD method using Co(acac) 3 precursor gave the Co 3 O 4 product.…”

Section: Resultsmentioning

confidence: 99%

“…When it comes to the fabrication of thin films with controlled growth, and cost effective deposition, chemical vapor deposition and more importantly, the aerosol assisted chemical vapor deposition (AACVD) is one of the most suitable protocol. Numerous cobalt precursors have been used for the chemical vapor depositions of Co x O y 34,35 the CVD process is limited by the lack of precursors having good stability in air and moisture that is ubiquitous in the atmosphere. Even the precursors that are available require multistep synthesis protocols.…”

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confidence: 99%

Facile Synthesis of Gold-Supported Thin Film of Cobalt Oxide via AACVD for Enhanced Electrocatalytic Activity in Oxygen Evolution Reaction

Ehsan

Aziz

Rehman

et al. 2018

ECS J. Solid State Sci. Technol.

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Herein, we report a rapid and facile synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold layer of 50 nm, directly onto plain glass substrates via aerosol assisted chemical vapor deposition (AACVD) approach. The films thus prepared are characterized by XRD, SEM, and EDX spectroscopy as a function of deposition time (i.e., 5 min -20 min). It is remarkably shown that the film growth rate is 0.8 nmSec −1 using this AACVD method and a commercially available precursor, which is ∼10 times higher as compared to the electrochemical synthetic routes. As a result, 250 nm thick cobalt oxide films are generated only in 5 minutes of deposition time. The water oxidation reaction for this film started at ∼0.6 V vs Ag/AgCl with current density of 10 mA cm −2 is achieved at ∼0.75 V that corresponds to an overpotential of 484 mV. This current density is further increased to 60 mA cm −2 at ∼1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations are also performed which indicated that the synergy between Au-film acting as electron sink and the cobalt oxide film acting as catalytic layer are more pronounced than the surface area effects.

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The Effect of the Degree of Fluorination on the MOCVD Growth of Cobalt Oxide Thin Films using Co(II) Acetylacetonate Complexes

et al. 2021

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The structurally related cobalt β‐diketonate complexes Co(acac)2, Co(acac)2 ⋅ TMEDA, Co(tfac)2 ⋅ TMEDA, and Co(hfac)2 ⋅ TMEDA (acac=2,4‐pentanedionate, tfac=1,1,1‐trifluoro‐2,4‐pentane‐dionate, hfac=1,1,1,5,5,5‐hexafluoro‐2,4‐pentane‐dionate, TMEDA=N,N,N′,N′‐tetramethylethylenediamine) were thermochemically (thermogravimetric analysis, differential scanning calorimetry) and spectroscopically (infrared, UV‐VIS and electron resonance spectroscopy) characterised and used as precursor for the MOCVD growth of cobalt monoxide (CoO) thin films. The influence of the degree of fluorination of the cobalt precursors on the morphology (scanning electron microscopy) and phase composition (X‐ray diffraction) of the CoO films is demonstrated. Carbon, nitrogen and fluorine impurities as a result of the thermal decomposition of the 2,4‐pentanedionate and tetraamine ligands in the films were identified by X‐ray photoelectron spectroscopy, time‐of‐flight secondary ion mass spectrometry, Rutherford backscattering spectrometry and nuclear reaction analysis. In addition, the influence of these contaminants on the electrocatalytically activity for the oxygen evolution reaction (OER) in alkaline media of the MOCVD grown CoO films is shown.

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Low-temperature chemical vapor deposition of cobalt oxide thin films from a dicobaltatetrahedrane precursor

Cited by 15 publications

References 44 publications

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

Facile Synthesis of Gold-Supported Thin Film of Cobalt Oxide via AACVD for Enhanced Electrocatalytic Activity in Oxygen Evolution Reaction

The Effect of the Degree of Fluorination on the MOCVD Growth of Cobalt Oxide Thin Films using Co(II) Acetylacetonate Complexes

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