Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor
Mathias Franz,
Mahnaz Safian Jouzdani,
Lysann Kaßner
et al.
Abstract:In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] and hydrogen plasma. For this precursor an ALD window in the temperature range between 50 and 110 °C was determined with a constant deposition rate of approximately 0.1 Å/cycle. The upper limit of the ALD window is defined by the onset of the decomposition of the precursor. In our case, decomposition occurs a… Show more
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