All-solution-processed pure formamidinium-based perovskite light-emitting diodes (PeLEDs) with record performance are successfully realized. It is found that the FAPbBr device is hole dominant. To achieve charge carrier balance, on the anode side, PEDOT:PSS 8000 is employed as the hole injection layer, replacing PEDOT:PSS 4083 to suppress the hole current. On the cathode side, the solution-processed ZnO nanoparticle (NP) is used as the electron injection layer in regular PeLEDs to improve the electron current. With the smallest ZnO NPs (2.9 nm) as electron injection layer (EIL), the solution-processed PeLED exhibits a highest forward viewing power efficiency of 22.3 lm W , a peak current efficiency of 21.3 cd A , and an external quantum efficiency of 4.66%. The maximum brightness reaches a record 1.09 × 10 cd m . A record lifetime T of 436 s is achieved at the initial brightness of 10 000 cd m . Not only do PEDOT:PSS 8000 HIL and ZnO NPs EIL modulate the injected charge carriers to reach charge balance, but also they prevent the exciton quenching at the interface between the charge injection layer and the light emission layer. The subbandgap turn-on voltage is attributed to Auger-assisted energy up-conversion process.
In all-solution processed inverted quantum dots based light emitting diodes (QLEDs), the solvent erosion on the quantum dot (QD) layer prevents devices from reaching high performance. By employing an orthogonal solvent 1,4-dioxane for the hole transport layer (HTL) poly(9-vinlycarbazole) (PVK), the external quantum efficiencies (EQE) of red QLED is increased 4-fold, while the luminous efficiencies (LE) of blue QLED is enhanced by 25 times, compared to the previous devices' record. To further improve the device efficiency and reduce the efficiency roll-off, solution processed PVK/poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(p-butylphenyl))diphenylamine)] (TFB) double-layer HTL is introduced to facilitate hole injection with stepwise energy level. By reducing the hole injection barrier, the turn-on voltage of QLEDs decreases from 3.4 to 2.7 V for red, from 5.1 to 2.7 V for green, and from 5.3 to 4.1 V for blue. The peak LE reach 22.1 cd/A, 21.4 cd/A, and 1.99 cd/A, while the maximum EQE reach 12.7%, 5.29%, and 5.99%, for red, green, and blue QLEDs, respectively. To the best of our knowledge, the red and blue QLEDs exhibit the best device performance among all the all-solution processed inverted QLEDs. In addition, the blue QLED is the champion among all the inverted QLEDs, including the devices fabricated by thermal evaporation.
Full-color matrix devices based on perovskite light-emitting diodes (PeLEDs) formed via inkjet printing are increasingly attractive due to their tunable emission, high color purity, and low cost. A key challenge for realizing PeLED matrix devices is achieving high-quality perovskite films with a favorable emission structure via inkjet printing techniques. In this work, a narrow phase distribution, high-quality quasi-two-dimensional (quasi-2D) perovskite film without a "coffee ring" was obtained via the introduction of a phenylbutylammonium cation into the perovskite and the use of a vacuum-assisted quick-drying process. Relatively efficient emissions of red, green, and blue (RGB) uniform quasi-2D perovskite films with high photoluminescence quantum yields were cast by the inkjet printing technique. The RGB monochrome perovskite matrix devices with 120 pixel-per-inch resolution exhibited electroluminescence, with maximum external quantum efficiencies of 3.5, 3.4, and 1.0% (for red, green, and blue light emissions, respectively). Furthermore, a full-color perovskite matrix device with a color gamut of 102% (NTSC 1931) was realized. To the best of our knowledge, this is the first report of a full-color perovskite matrix device formed by inkjet printing.
All-solution processed inverted quantum dot light emitting diodes (QLEDs) with record performance have been realized by introducing dually-doped poly(ethylenedioxythiophene)/polystyrenesulfonate (PEDOT:PSS) and polyethylenimine (PEI).
Polymer insulator is employed as efficient hole injection layer (HIL) in lead halide perovskites light‐emitting diodes (PeLEDs) for the first time, by revealing that metal–insulator–semiconductor (MIS) contact is responsible for the hole‐injection mechanism in PeLEDs with indium tin oxide (ITO)/insulator/perovskite structure. For MIS contact of ITO/insulator/perovskite, the electric field is concentrated in the insulator layer, thereby reducing the tunneling distance from ITO to perovskite. By studying the transient current response, it is confirmed that the accumulation of both electrons and ions at the insulator/perovskite interface is responsible for the screening of electric field. With polystyrene (PS) as hole injection layer, the device exhibits a much better device performance than that of PeLEDs with regular polyvinylcarbazole (PVK) HIL, even though the resistivity of PS is 5 orders of magnitude higher than that of PVK, which confirms the universal applicability of MIS contact. By optimizing the thickness of PS layer, the performance of FAPbBr3‐based device achieves a turn‐on voltage of 2.8 V, a peak luminous efficiency of 44.7 cd A−1, and an external quantum efficiency of 10.6%.
An environment-friendly inverted indium phosphide red quantum dot light-emitting diode (InP QLED) was fabricated using Mg-doped zinc oxide (ZnMgO) as the electron transport layer (ETL). The effects of ZnMgO ETL on the performance of InP QLED were investigated. X-ray diffraction (XRD) analysis indicated that ZnMgO film has an amorphous structure, which is similar to zinc oxide (ZnO) film. Comparison of morphology between ZnO film and ZnMgO film demonstrated that Mg-doped ZnO film remains a high-quality surface (root mean square roughness: 0.86 nm) as smooth as ZnO film. The optical band gap and ultraviolet photoelectron spectroscopy (UPS) analysis revealed that the conduction band of ZnO shifts to a more matched position with InP quantum dot after Mg-doping, resulting in the decrease in turn-on voltage from 2.51 to 2.32 V. In addition, the ratio of irradiation recombination of QLED increases from 7% to 25% using ZnMgO ETL, which can be attributed to reduction in trap state by introducing Mg ions into ZnO lattices. As a result, ZnMgO is a promising material to enhance the performance of inverted InP QLED. This work suggests that ZnMgO has the potential to improve the performance of QLED, which consists of the ITO/ETL/InP QDs/TCTA/MoO3/Al, and Mg-doping strategy is an efficient route to directionally regulate ZnO conduction bands.
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