Hollow spheres and thin films of Ni(OH)(2) and NiO with unusual form and hierarchical structures have been synthesized by a simple solution chemistry method. First, in situ formed Ni(OH)(2) nanoflakelets organized on the surface of styrene-acrylic acid copolymer (PSA) latex particles to form core/shell structures. Ni(OH)(2) hollow shells built up with nanoflakelets were obtained after subsequent removal of the core latex particles by dissolving PSA latex in toluene; the removal of the cores by calcinations would result in NiO hollow shells, also with hierarchical structures. BET calculation showed the surface area of the NiO hollow spheres was 156 m(2)/g. The nanoflakelets could also organize themselves into thin films with hierarchical structures. It is anticipated that these novel structures will have some unique applications in Ni-based batteries and other potentials.

All-solution-processed pure formamidinium-based perovskite light-emitting diodes (PeLEDs) with record performance are successfully realized. It is found that the FAPbBr device is hole dominant. To achieve charge carrier balance, on the anode side, PEDOT:PSS 8000 is employed as the hole injection layer, replacing PEDOT:PSS 4083 to suppress the hole current. On the cathode side, the solution-processed ZnO nanoparticle (NP) is used as the electron injection layer in regular PeLEDs to improve the electron current. With the smallest ZnO NPs (2.9 nm) as electron injection layer (EIL), the solution-processed PeLED exhibits a highest forward viewing power efficiency of 22.3 lm W , a peak current efficiency of 21.3 cd A , and an external quantum efficiency of 4.66%. The maximum brightness reaches a record 1.09 × 10 cd m . A record lifetime T of 436 s is achieved at the initial brightness of 10 000 cd m . Not only do PEDOT:PSS 8000 HIL and ZnO NPs EIL modulate the injected charge carriers to reach charge balance, but also they prevent the exciton quenching at the interface between the charge injection layer and the light emission layer. The subbandgap turn-on voltage is attributed to Auger-assisted energy up-conversion process.

One of the critical issues for the fabrication of desirable sensing materials has focused on the construction of an effective continuous network with a low percolation threshold. Herein, graphene-based elastomer composites with a segregated nanostructured graphene network were prepared by a novel and effective ice-templating strategy. The segregated graphene network bestowed on the natural rubber (NR) composites an ultralow electrical percolation threshold (0.4 vol %), 8-fold lower than that of the NR/graphene composites with homogeneous dispersion morphology (3.6 vol %). The resulting composites containing 0.63 vol % graphene exhibited high liquid sensing responsivity (6700), low response time (114 s), and good reproducibility. The unique segregated structure also provides this graphene-based elastomer (containing 0.42 vol % graphene) with exceptionally high stretchability, sensitivity (gauge factor ≈ 139), and good reproducibility (∼400 cycles) of up to 60% strain under cyclic tests. The fascinating performances highlight the potential applications of graphene-elastomer composites with an effective segregated network as multifunctional sensing materials.

Nanometric and monodisperse starch acetate nanospheres can be prepared through a simple procedure of nanoprecipitation, by the dropwise addition of water to an acetone solution of starch acetate, without any stabilizing agent. This is the first report of the preparation of starch-based nanospheres by this method. The size of the nanospheres obtained can be easily controlled by a number of simple and efficient modifications, i.e., through regulation of the polymer concentration in acetone, the proportions of the water and organic phases, and the molecular weight and degree of substitution of the starch esters. A number of reasons are suggested to explain the observed transitions in the particle size. Fluorescence spectroscopic studies proved that these types of nanospheres could be potentially used for the encapsulation of hydrophobic drugs.

Chalcopyrite compound CuGaTe2 is the focus of much research interest due to its high power factor. However, its high intrinsic lattice thermal conductivity seriously impedes the promotion of its thermoelectric performance. Here, it is shown that through alloying of isoelectronic elements In and Ag in CuGaTe2, a quinary alloy compound system Cu1−xAgxGa0.4In0.6Te2 (0 ≤ x ≤ 0.4) with complex nanosized strain domain structure is prepared. Due to strong phonon scattering mainly by this domain structure, thermal conductivity (at 300 K) drops from 6.1 W m−1 K−1 for the host compound to 1.5 W m−1 K−1 for the sample with x = 0.4. As a result, the optimized chalcopyrite sample Cu0.7Ag0.3Ga0.4In0.6Te2 presents an outstanding performance, with record‐high figure of merit (ZT) reaching 1.64 (at 873 K) and average ZT reaching 0.73 (between ≈300 and 873 K), which are ≈37 and ≈35% larger than the corresponding values for pristine CuGaTe2, respectively, demonstrating that such domain structure arising from isoelectronic multielement alloying in chalcopyrite compound can effectively suppress its thermal conductivity and elevate its thermoelectric performance remarkably.

Solution-processed electroluminescent tandem white quantum-dot light-emitting diodes (TWQLEDs) have the advantages of being low-cost and high-efficiency and having a wide color gamut combined with color filters, making this a promising backlight technology for high-resolution displays. However, TWQLEDs are rarely reported due to the challenge of designing device structures and the deterioration of film morphology with component layers that can be deposited from solutions. Here, we report an interconnecting layer with the optical, electrical, and mechanical properties required for fully solution-processed TWQLED. The optimized TWQLEDs exhibit a state-of-the-art current efficiency as high as 60.4 cd/A and an extremely high external quantum efficiency of 27.3% at a luminance of 100 000 cd/m. A high color gamut of 124% NTSC 1931 standard can be achieved when combined with commercial color filters. These results represent the highest performance for solution-processed WQLEDs, unlocking the great application potential of TWQLEDs as backlights for new-generation displays.

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