Articles you may be interested inCurrent, charge, and capacitance during scanning probe oxidation of silicon. I. Maximum charge density and lateral diffusionRecently, scanning resistive probe microscopy, which has a semiconducting resistor at the apex of the tip and observes surface charges directly, was newly proposed and fabricated. In order to optimize process parameters as well as to understand the mechanisms of the field induced resistance change in the resistive probe, the doping profile of resistive patterns is investigated by the use of Kelvin probe force microscopy. Overlapping space charge regions ͑O-SCRs͒ in between n + regions were observed. Decreased barrier heights in the structure of n + / O-SCR/ n + were also investigated. In particular, resistive patterns with diffusion times longer than 12 h were observed to have overlapped outdiffusion of As + ions, showing no formation of O-SCR in between n + regions. This was also confirmed by measurements of I-V characteristics.
Transformation kinetics of pyrochlore to perovskite phase in lead zirconate titanate (PZT) ihin lilms have been studied. Sol-gel PZT ihin films nn platinum electrode were prepared with -' iO and 100 nm in ihickness. Isothermal annealing was u.sed to study the nuclcation and growth kinetics of perovskile pha.se. Piezo-response force microscopy (PFM). a variant of scanning force microscopy (SFM), provides informaiion on the volume fraction ol'ihe translormed pha.ses and sizeof the grains with higher resoluiion as well as larger area than other microscopic techniques. The volume fraction ofthe transformed perovskite phase was lakcn Irom the topographical and piezo-response images by SFM and PFM. Avrami's model for Ihe kinetics of transformation was applied Io delerniinc Avrami's ciiefficient {n) and rate constant {k). The effective activation energy of transformation from pyrochore to perovskite wa.s found to be about 220 and 227 kj/mol for 50 and I (K) nm ihick PZT films, respectively.
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