We have studied the influence of design and process variations on the electrical performance of SiC Schottky diodes. On the design side, two design variations are used in the active cell of the diode (segment design and stripe design). In addition, there are two more design variations employed for the edge termination layout of the diodes, namely, field limiting ring (FLR) and junction termination extension (JTE). On the process side, some diodes have gone through an N 2 O annealing step. The segment design resulted in a lower forward voltage drop (V F ) in the diodes and the FLR design turned out to be a better choice for blocking voltages, in the reverse bias. Also, N 2 O annealing has shown a detrimental effect on the diodes' blocking performance, which have JTE as their termination design. It degrades the blocking capability of the diodes significantly.
In this work we have studied the influence of design and process variations on electrical performance of 1.7 kV 4H-SiC Schottky diodes. Diodes with two variations in their active region design namely, stripe design and segment design, were fabricated in this study. Field Limiting Rings (FLRs) or Junction Termination Extension (JTE) were used as edge termination design to achieve a blocking voltage of 1.7 kV. In addition to these designs an extra processing step of nitrous oxide (N2O) annealing was performed on some of the diodes. The study has shown that there is no extra beneficial effect of nitrous oxide annealing on device characteristics.
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