Impact of design and process variation on the fabrication of SiC diodes

Abstract

We have studied the influence of design and process variations on the electrical performance of SiC Schottky diodes. On the design side, two design variations are used in the active cell of the diode (segment design and stripe design). In addition, there are two more design variations employed for the edge termination layout of the diodes, namely, field limiting ring (FLR) and junction termination extension (JTE). On the process side, some diodes have gone through an N 2 O annealing step. The segment design resulted in a lower forward voltage drop (V F ) in the diodes and the FLR design turned out to be a better choice for blocking voltages, in the reverse bias. Also, N 2 O annealing has shown a detrimental effect on the diodes' blocking performance, which have JTE as their termination design. It degrades the blocking capability of the diodes significantly.

Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

“…As a result, it makes more sense to build hybrid systems. Also at present, hybrid approach strikes a good balance between cost and efficiency achieved by these modules [24][25][26][27]. Also, it is worthwhile to point out that although SiC diodes and MOSFETs are available at 1.7 kV and lower voltages, there is no MOSFET supplier at 3.3 kV.…”

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

“…Silicon carbide (SiC) has been identified as the choice of material to fabricate high temperature, high voltage, high frequency, high power, radiation resistant devices due to its excellent physical and chemical properties [1][2][3]. General epitaxial growth is performed on off-axis 4H-SiC(0001) substrates, which would raise the cost of materials and devices, reduce the performance and reliability of the device because of the basal plane dislocations reproduction [4,5].…”