No abstract

No abstract

A low-temperature direct wafer bonding process was developed to realize the high-quality transfer of the largest (150 mm in diameter) available InP-based epitaxial structure onto the prepatterned silicon-on-insulator (SOI) substrate. Over 95% bonding yield and a void free bonding interface was obtained. A InGaAsP multiple quantum-well (MQW) diode laser structure is well preserved after bonding, as indicated by the high-resolution X-ray diffraction (XRD) rocking curve measurement. XRD omega scans of the bonded wafers over a 9×9 matrix revealed a small bowing of only 64.12 µm, showing that the III-V epitaxial surface is relatively flat with low-strain. The first InGaAsP-based MQW hybrid Si evanescent racetrack ring lasers have been realized, showing comparable performance as previously InAlGaAs ring lasers.

Spiral inductors with various metal fill‐patterns under the spiral is fabricated with SOI CMOS technology and characterized up to 49 GHz. The impact of the fill on the inductor characteristics is found to be very small and changes can be attributed to the increase of parasitic capacitance. A simple model is proposed that can accurately estimate the increase of capacitance. A simple model is proposed that can accurately estimate the increase of capacitance by the fill. Design guidelines for optimizing fill patterns are recommended. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 462–465, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10790