In this paper, significant progresses on low‐temperature poly‐Si (LTPS) backplane technologies as well as active‐matrix organic light emitting diode (AMOLED) architectures were demonstrated and reported. In order to make display more compact, reliable and further reduction in the cost, system‐on‐panel (SOP) was realized with good device performance and small design rule capability. Moreover, over the past few years, many hypes on AMOLED have been announced, but less achievement was done for production activity. To overcome these technical challenges such as non‐uniformity, power consumption and higher resolution issues, several approaches are proposed for AMOLED displays
We propose a new pixel design which has one slit electrode for 847 ppi resolution. The pixel design facilitates a reduction of disclination area in the pixel and reduction of color mixing. As a result, we have demonstrated a high luminance, small color shift until the 30 degrees view angle and good image quality on 5.2 inch 847 ppi panel.
A method for enhancing the transmittance and response time of negative LC-based fringing-field switching (n-FFS) liquid crystal displays (LCDs) has been demonstrated by using a new pixel electrode pattern. Compared to the conventional device, transmittance was enhanced extraordinarily by about 9.3% for 538 ppi and maximal gray to gray (GTG) response time was decreased enormously 6 ms.
A novel process for fabricating self-aligned gate-overlapped LDD (SAGOLDD) poly-Si thin film transistors (TFTs) was demonstrated. Laser irradiation for dopant activation was performed from the backside of the quartz wafer. The graded LDD structure was naturally formed under the gate edges due to the lateral diffusion of the dapants during the laser activation. In comparison with the conventional laser-processed self-aligned poly-Si TFTs, the SAGOLDD poly-Si TFTs exhibited lower leakage current, suppressed kink effect, and higher reliability. Moreover, the proposed process was simple and very suitable for low-temperature process.Index Terms-Excimer laser, poly-Si thin film transistor, selfaligned gate-overlapped LDD.
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