37-3: A Novel Pixel Structure for 847 ppi Display with LTPS Technology

Abstract

We propose a new pixel design which has one slit electrode for 847 ppi resolution. The pixel design facilitates a reduction of disclination area in the pixel and reduction of color mixing. As a result, we have demonstrated a high luminance, small color shift until the 30 degrees view angle and good image quality on 5.2 inch 847 ppi panel.

Thin and low‐reflection metal black matrix for high ppi liquid crystal display

“…The color mixing is casued by light that has passed through a pixel aperture of TFT substrate is incident into CF of an adjacent pixel aperture. [6][7][8][9][10] In addition, VR headsets sometimes use pancake optics as the optical system, which is effective in reducing size and weight. [11][12][13][14][15][16] But it is reported that countermeasures against ghosts are important.…”

“…On the other hand, it has been reported that it is difficult to achieve both high transmittance and reducing color mixing in high‐definition LCD panel. The color mixing is casued by light that has passed through a pixel aperture of TFT substrate is incident into CF of an adjacent pixel aperture 6–10 . In addition, VR headsets sometimes use pancake optics as the optical system, which is effective in reducing size and weight 11–16 .…”

16‐2: Distinguished Paper: Thin and Low‐Reflection Metal Black Matrix for High PPI LCD

“…On the other hand, it has been reported that it is difficult to achieve both high transmittance and color mixing which is light that has passed through a pixel aperture of TFT substrate is incident into CF of an adjacent pixel aperture suppression in high-definition LCD panel [1]. In addition, VR headsets sometimes use pancake optics as the optical system, which is effective in reducing size and weight.…”

24.5: Back‐Channel‐Etched a‐IGZO TFTs with TiO2:Nb Protective Layer

“…The AOS TFTs usually have much higher field effect mobility (~10 cm 2 /V·s) than the amorphous silicon (a-Si) TFTs (~0.5 cm 2 /V·s), and thus are able to be used for large area active-matrix organic light emitting diode (AMOLED) displays and high resolution active-matrix liquidcrystal displays (AMLCDs). On the other hand, the AOS TFTs exhibit excellent performance uniformity over large area due to the amorphous crystal structure [2] and are thus much superior to polycrystalline silicon (poly-Si) TFTs which usually show poor uniformity induced by the grain boundaries in spite of the high carrier mobility [3]. The amorphous indium gallium zinc oxide (a-IGZO) is one of the most promising materials for metal oxide semiconductor based TFTs and has been widely investigated.…”