International audienceDeep level transient spectroscopy measurements were per- formed on three non-intentionally doped n-type ZnO samples grown by different techniques in order to investigate the electronic properties of E3 electron trap. The ionization energy and the capture cross-section are found respectively at 0.275 eV from the conduction band and 2.3×10^−16 cm2 with no electric field dependence. This center is present irrespective of the synthesis method. In view of its physical properties and recent works published in the literature, its physical origin is discussed. Based mainly on its insensibility to the macroscopic electric field, the best candidates turn out to be dual defects with opposite charges on adjacent sites, like the dual vacancy VO -VZn
International audienceThe residual n-type conductivity of O-polar hydrothermally grown ZnO single crystals and the role of annealing on the transport properties are assessed by temperature dependent Hall measurements on a wide 20-800 K temperature range. A deep level lying 250 meV below the conduction band is responsible for the residual n-type conductivity of unannealed samples. After annealing, a shallow donor level with 25 meV ionization energy becomes responsible for the sample conductivity in the room temperature range. Thanks to high temperature Hall measurement, the coexistence of the deep and the shallow level has been demonstrated in the case of annealed sample
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