Electronic properties of E3 electron trap in n‐type ZnO

Chicot, Gauthier; Pernot, Julien; Santailler, Jean‐Louis; Chevalier, Céline; Granier, Carole; Ferret, P.; Ribeaud, Alexandre; Feuillet, G.; Muret, Pierre

doi:10.1002/pssb.201349261

Cited by 11 publications

(17 citation statements)

References 17 publications

(41 reference statements)

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“…However, a physically meaningful set of parameters for a configuration-coordinate diagram could not be derived. The finding that the model of Lucovsky is not applicable to the E3 defect in ZnO is in line with Chicot et al, [55] who assigned an asymmetric potential to E3.…”

Section: Dlts Measurementssupporting

confidence: 86%

“…[24,55] This, together with σ 1 n being comparatively small (% 2 Â 10 À16 cm 2 ), suggests that E3 is either neutral or negatively charged prior to electron capture. [24,55] Chicot et al conclude further that the defect potential of E3 must be asymmetric [55] To resolve the "E3-puzzle," the optical properties of the defect are also of interest and will provide further information about the nature of the defect. In an earlier study from our laboratory by Ellguth et al, [19] it was found that E3 in ZnO thin films could not be photo-ionized.…”

Section: Introductionmentioning

confidence: 98%

“…It can, however, be stated that

σ_{n}^{\infty}

is only weakly dependent on the electric field strength . This, together with

σ_{n}^{\infty}

being comparatively small (

\approx 2 \times 10^{- 16} {cm}^{2}

), suggests that E3 is either neutral or negatively charged prior to electron capture . Chicot et al conclude further that the defect potential of E3 must be asymmetric…”

Section: Introductionmentioning

confidence: 99%

“…In summary, very different and contradictory interpretations of the nature of the E3 defect in ZnO have been published. For its microscopic origin, transition metal ions, the oxygen vacancy, complexes involving the oxygen vacancy, hydrogen, and interstitial zinc, have been proposed, but a definitive judgement cannot be made so far. Therefore it is necessary to investigate the problem in more detail and determine and analyze the physical properties of E3 not yet described.…”

Section: Introductionmentioning

confidence: 99%

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Negative‐U Properties of the Deep Level E3 in ZnO

Pickenhain

Schmidt

Wenckstern

et al. 2018

Physica Status Solidi (b)

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The deep level E3 is a commonly observed defect in bulk crystals and thin films of ZnO independently of the method of growth. Its chemical origin is still not finally understood. In this paper, previous research on the E3 level is reviewed and recent experimental results acquired by optical deep level transient spectroscopic (DLTS) methods are presented for the temperature range from 4 to 350 K, for photon energies between 0.25 and 4 eV, and for emission rates ranging from 10−3 to 104 s−1. The capture cross section of the optical transition of E3‐trapped electrons into the conduction band is described. Additionally, a second optical transition occurs for photon energies higher than 1 eV, which accounts for the lowering of the E3 DLTS signal at low temperatures under illumination. Further, it is unambiguously shown that the E3 defect can bind up to two electrons and that it has the properties of a negative‐U center. Photoluminescence measurements reveal that the E3 defect is directly connected to a radiative recombination channel at 2.09 eV. Further, electron paramagnetic resonance (EPR) measurements were performed with optical excitation in dependence on the temperature and photon energy. Interestingly, the temperature‐dependent EPR signal of normalVnormalO+ is similar to that of the photo‐ionization cross‐section of the E3 defect. These experimental findings are discussed in comparison with published EPR results and results obtained by first‐principle calculations of native point defects in ZnO.

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Section: Dlts Measurementssupporting

confidence: 86%

Section: Introductionmentioning

confidence: 98%

“…It can, however, be stated that

σ_{n}^{\infty}

is only weakly dependent on the electric field strength . This, together with

σ_{n}^{\infty}

being comparatively small (

\approx 2 \times 10^{- 16} {cm}^{2}

), suggests that E3 is either neutral or negatively charged prior to electron capture . Chicot et al conclude further that the defect potential of E3 must be asymmetric…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Negative‐U Properties of the Deep Level E3 in ZnO

Pickenhain

Schmidt

Wenckstern

et al. 2018

Physica Status Solidi (b)

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“…By taking values T=300 K, v th =2.2×10 7 cms -1 , =2.3×10 -16 cm -2 [14] , and N=3.5×10 18 cm -3 , D it for the energy level 0.25-0.32 eV below the ZnO conduction band edge, E C was estimated as shown in figure 6. It can be observed that D it decreases with energy below the conduction band edge.…”

Section: Methodsmentioning

confidence: 99%

Understanding the Effect of MgO Interfacial Layer on ZnO/High-K/FTO Transparent Thin Film Transistors for Large-Area Transparent Electronics Applications

Thapaliya

Jha

2015

ECS Trans.

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We have fabricated transparent ZnO thin film transistors (TFTs) with fluorine doped tin oxide (FTO) as a gate electrode and HfO 2 as a gate dielectric. To suppress the high interface state density (D it ), a series of thickness of MgO interfacial layer between ZnO and HfO 2 has been investigated. ZnO TFTs with 10 nm MgO interfacial layer displayed improved performance with field effect mobility of 0.3 cm 2 V -1 s -1 , threshold voltage of 3.7 V and on/off ratio of 10 6 compared to 5 nm, 15 nm and 20 nm MgO interfacial layer. D it and its energy level distribution below 0.25-0.32 eV below the conduction band edge of ZnO were quantified using the conductance method.

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