Conductive polymer composites are manufactured by randomly dispersing conductive particles along an insulating polymer matrix. Several authors have attempted to model the piezoresistive response of conductive polymer composites. However, all the proposed models rely upon experimental measurements of the electrical resistance at rest state. Similarly, the models available in literature assume a voltage-independent resistance and a stress-independent area for tunneling conduction. With the aim of developing and validating a more comprehensive model, a test bench capable of exerting controlled forces has been developed. Commercially available sensors—which are manufactured from conductive polymer composites—have been tested at different voltages and stresses, and a model has been derived on the basis of equations for the quantum tunneling conduction through thin insulating film layers. The resistance contribution from the contact resistance has been included in the model together with the resistance contribution from the conductive particles. The proposed model embraces a voltage-dependent behavior for the composite resistance, and a stress-dependent behavior for the tunneling conduction area. The proposed model is capable of predicting sensor current based upon information from the sourcing voltage and the applied stress. This study uses a physical (non-phenomenological) approach for all the phenomena discussed here.

A comparative study of the chemical functionalization of undoped, n- and p-type GaN layers grown on sapphire substrates by metal-organic chemical vapor deposition was carried out. Both types of samples were chemically functionalized with 3-aminopropyltriethoxysilane (APTES) using a well-established silane-based approach for functionalizing hydroxylated surfaces. The untreated surfaces as well as those modified by hydroxylation and APTES deposition were analyzed using angle-resolved X-ray photoelectron spectroscopy. Strong differences were found between the APTES growth modes on n- and p-GaN surfaces that can be associated with the number of available hydroxyl groups on the GaN surface of each sample. Depending on the density of surface hydroxyl groups, different mechanisms of APTES attachment to the GaN surface take place in such a way that the APTES growth mode changes from a monolayer to a multilayer growth mode when the number of surface hydroxyl groups is decreased. Specifically, a monolayer growth mode with a surface coverage of approximately 78% was found on p-GaN, whereas the formation of a dense film, approximately 3 monolayers thick, was observed on n-GaN.

ZrCN coatings were deposited by dc reactive magnetron sputtering with N 2 flows ranging from 2 to 10 sccm in order to investigate the influence of the nitrogen incorporation on structure and properties. Information about the chemical composition was obtained by glow discharge optical emission spectroscopy and Rutherford backscattering spectroscopy. The evolution of the crystal structure studied by X-ray diffraction revealed the formation of a face-centred cubic ZrCN phase for N 2 flows greater than 4 sccm. Additionally, the presence of an amorphous phase in the coatings deposited with the highest N 2 flows could be evidenced by Raman spectroscopy and X-ray photoelectron spectroscopy. This phase can act as a lubricant resulting in a low coefficient of friction as shown in the conducted ball-on-disc tests. Nanoindentation measurements showed that coatings deposited with a 6 sccm N 2 flow had the maximum hardness which also revealed the best performance in the conducted dry cutting tests.