We demonstrated a silicon microring resonator driven by high mobility titanium-doped indium oxide MOS capacitor. It achieved an unprecedented wavelength tunability of 480 pm/V with field-effect mobility of 70 cm2V-1s-1 in the gate.
We demonstrated a slotted silicon microring resonator with the waveguide gap filled by high mobility titanium-doped indium oxide (ITiO) MOS capacitor. It experimentally achieved an extremely large electro-optic wavelength tunability of 540 pm/V.
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