Silicon microring resonators (Si-MRRs) play essential roles in on-chip wavelength division multiplexing (WDM) systems due to their ultra-compact size and low energy consumption. However, the resonant wavelength of Si-MRRs is very sensitive to temperature fluctuations and fabrication process variation. Typically, each Si-MRR in the WDM system requires precise wavelength control by free carrier injection using PIN diodes or thermal heaters that consume high power. This work experimentally demonstrates gate-tuning on-chip WDM filters for the first time with large wavelength coverage for the entire channel spacing using a Si-MRR array driven by high mobility titanium-doped indium oxide (ITiO) gates. The integrated Si-MRRs achieve unprecedented wavelength tunability up to 589 pm/V, or VπL of 0.050 V cm with a high-quality factor of 5200. The on-chip WDM filters, which consist of four cascaded ITiO-driven Si-MRRs, can be continuously tuned across the 1543–1548 nm wavelength range by gate biases with near-zero power consumption.
We demonstrated a silicon microring resonator driven by high mobility titanium-doped indium oxide MOS capacitor. It achieved an unprecedented wavelength tunability of 480 pm/V with field-effect mobility of 70 cm2V-1s-1 in the gate.
We demonstrated a slotted silicon microring resonator with the waveguide gap filled by high mobility titanium-doped indium oxide (ITiO) MOS capacitor. It experimentally achieved an extremely large electro-optic wavelength tunability of 540 pm/V.
We demonstrated efficient gate-tuning on-chip wavelength division multiplexing filters using a silicon microring resonator array driven by high-mobility titanium-doped indium oxide gates. It shows extensive wavelength coverage for entire channel spacing over 5 nm.
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