Continuous and uniform graphene films were directly grown on SiO 2 substrates using a chemical vapor deposition system with two-temperature zones assembled. The carbon species from the high temperature zone nucleate in the low temperature zone, initiating the growing process of graphene. The films are

Direct deposition of a uniform and high-quality Bi2Se3 thin film on a graphene film (layer controlled) is performed using a catalyst-free vapor deposition system in a Se-rich environment.

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