Facile fabrication of graphene-topological insulator Bi₂Se₃ hybrid Dirac materials via chemical vapor deposition in Se-rich conditions

Abstract

Direct deposition of a uniform and high-quality Bi2Se3 thin film on a graphene film (layer controlled) is performed using a catalyst-free vapor deposition system in a Se-rich environment.

Emerging opportunities in the two-dimensional chalcogenide systems and architecture

“…Due to their excellent chemical and thermal stability, graphene and h-BN form the ideal starting point for this strategy, as has been shown throughout the literature. Presently, a variety of 2D chalcogenide heterostructures have been demonstrated using this method: MoS 2 /graphene [141], MoS 2 /h-BN [142], WSe 2 /Graphene [143], Bi 2 Se 3 /graphene [64], among others. Using the CVD or PVD methods described above, chalcogenide layers can be directly deposited onto the graphene or h-BN, where they can then serve as contacts (graphene) or dielectric layers and tunnel barriers (h-BN).…”

“…By controlling the growth temperature and timing, the precursors are active at different times, resulting in serial deposition of the two materials. This technique could also be extended to make chalcogenide heterostructures containing materials that are not yet accessible via CVD techniques (GaS, GeSe) and has already been applied to create topological insulator heterostructures of the A 2 X 3 compounds [64].…”

“…(c.) Schematic of oxide precursor growth of MoS 2 . (d.) Grown Bi 2 Se 3 nanoplates on graphene[64]. (e.) Bi 2 Se 3 monolayers made via evaporative thinning[65].…”

Fabrication of Graphene/Bi2Se3/Graphene heterostructure without the surface oxidation of Bi2Se3

“…Layer-structured Bi 2 Se 3 materials may be applied for the future spintronics and quantum computing devices due to large ratio of surface-to-volume, thus it is urgent to synthesize high-quality Bi 2 Se 3 with defined sizes [2][3][4]. Various methods have been tried to fabricate Bi 2 Se 3 thin film, such as molecular beam epitaxial (MBE) [5,6], solvothermal synthesis [7], mechanical exfoliation [8], metalorganic chemical vapor deposition (MOCVD) [9] and chemical vapor deposition (CVD) [10][11][12][13]. Compared with other methods, CVD is an inexpensive and effective strategy to obtain Bi 2 Se 3 materials.…”

“…Directly fabricated the large-area high-quality Bi 2 Se 3 film on SiO 2 is difficult due to the larger lattice mismatch between Bi 2 Se 3 and SiO 2 . Graphene film, a 2-D atomic-scale honeycomb lattice made of carbon atoms, can be used to fabricate the high-quality epitaxial layer benefiting from that the van der Waals interactions between epitaxial layer and graphene can efficiently suppress the negative effects of the lattice mismatch [12]. Here, we fabricated large-area high-quality Bi 2 Se 3 thin film in a Se-rich environment via a catalyst-free CVD method on the graphene/SiO 2 substrate.…”